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MRF6S19140HSR3

P1-P3P4-P6P7-P9P10-P11
MRF6S19140HR3 MRF6S19140HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
250
10
8
90
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
DD
= 28 Vdc, P
out
= 29 W Avg., and η
D
= 27.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
10
7
10
6
10
5
110 130 150 170 190
MTTF (HOURS)
210 230
N- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK −TO−AVERAGE (dB)
Figure 13. 2- Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2468
f, FREQUENCY (MHz)
−100
0
Figure 14. 2- Carrier N - CDMA Spectrum
−10
−20
−30
−40
−50
−60
−70
−80
−90
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
61.5 4.530−1.5−3−4.5−6−7.5 7.5
(dB)
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
8
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Ω
Z
load
Ω
1900
1930
1960
1.13 - j0.67
1.07 - j0.46
1.11 - j0.60
2.27 - j3.95
2.00 - j4.24
1.72 - j3.96
V
DD
= 28 Vdc, I
DQ
= 1150 mA, P
out
= 29 W Avg.
Z
o
= 5 Ω
Z
load
f = 1900 MHz
f = 2020 MHz
Z
source
1990
2020 1.01 - j0.17
1.06 - j0.301.80 - j3.51
1.69 - j3.17
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured
from drain to ground.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1900 MHz
f = 2020 MHz
MRF6S19140HR3 MRF6S19140HSR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465B- 03
ISSUE D
NI- 880
MRF6S19140HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.335 1.345 33.91 34.16
B 0.535 0.545 13.6 13.8
C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
G 1.100 BSC 27.94 BSC
H 0.057 0.067 1.45 1.70
K 0.175 0.205 4.44 5.21
N 0.871 0.889 19.30 22.60
Q .118 .138 3.00 3.51
R 0.515 0.525 13.10 13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q2X
M
A
M
bbb B
M
T
M
A
M
bbb B
M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B
M
T
M
A
M
bbb B
M
T
AA
(FLANGE)
T
N
(LID)
M
(INSULATOR)
S
M
A
M
aaa B
M
T
(INSULATOR)
R
M
A
M
ccc B
M
T
(LID)
S 0.515 0.525 13.10 13.30
M 0.872 0.888 22.15 22.55
aaa 0.007 REF 0.178 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
4
CASE 465C- 02
ISSUE D
NI- 880S
MRF6S19140HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.905 0.915 22.99 23.24
B 0.535 0.545 13.60 13.80
C 0.147 0.200 3.73 5.08
D 0.495 0.505 12.57 12.83
E 0.035 0.045 0.89 1.14
F 0.003 0.006 0.08 0.15
H 0.057 0.067 1.45 1.70
K 0.170 0.210 4.32 5.33
N 0.871 0.889 19.30 22.60
R 0.515 0.525 13.10 13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb B
M
T
B
B
(FLANGE)
M
A
M
ccc B
M
T
M
A
M
bbb B
M
T
AA
(FLANGE)
T
N
(LID)
M
(INSULATOR)
M
A
M
ccc B
M
T
M
A
M
aaa B
M
T
R
(LID)
S
(INSULATOR)
S 0.515 0.525 13.10 13.30
M 0.872 0.888 22.15 22.55
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.007 REF 0.178 REF
P1-P3P4-P6P7-P9P10-P11

MRF6S19140HSR3

Mfr. #:
Buy MRF6S19140HSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6 28V29W LDMOS NI880HS
Lifecycle:
New from this manufacturer.
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