10/20
XC6118 Series
Circuit 1
Circuit 2
Circuit 3
Circuit 4
Circuit 5
Circuit 6
Circuit 7
Circuit 8
Circuit 9
*No delay capacitance pin available in the XC6118xxxC/D series.
R
PULL
=100kΩ
(No resistor needed for
CMOS output products)
R
PULL
=100kΩ
(No resistor needed for
CMOS output products)
R
PULL
=100kΩ
(No resistor needed for CMOS output products)
Waveform Measurement Point
VIN
VSEN
Cd
VSS
VOUT
AXC6118 Series
VIN
VSEN
Cd
VSS
VOUT
A
XC6118 Series
VIN
VSEN
Cd
VSS
VOUT
A
XC6118 Series
VIN
VSEN
Cd
VSS
VOUT
V
V
XC6118 Series
VIN
VSEN
Cd
VSS
VOUT
V
XC6118 Series
TEST CIRCUITS
11/20
XC6118
Series
A typical circuit example is shown in Figure 1, and the timing chart of Figure 1 is shown in Figure 2.
As an early state, the sense pin is applied sufficiently high voltage (6.0V MAX.) and the delay capacitance (Cd) is charged
to the power supply input voltage, (V
IN: 1.0V MIN., 6.0V MAX.). While the sense pin voltage (VSEN) starts dropping to
reach the detect voltage (V
DF) (VSEN>VDF), the output voltage (VOUT) keeps the “High” level (=VIN).
* If a pull-up resistor of the XC6118N series (N-ch open drain) is connected to added power supply different from the input
voltage pin, the “High” level will be a voltage value where the pull-up resistor is connected.
When the sense pin voltage keeps dropping and becomes equal to the detect voltage (VSEN =VDF), an N-ch transistor (M1)
for the delay capacitance (Cd) discharge is turned ON, and starts to discharge the delay capacitance (Cd). An inverter
(Inv
.
1) operates as a comparator of the reference voltage VIN, and the output voltage changes into the “Low” level (=VSS).
The detect delay time [t
DF
] is defined as time which ranges from VSEN=VDF to the VOUT of “Low” level (especially, when the
Cd pin is not connected: t
DF0
).
While the sense pin voltage keeps below the detect voltage, the delay capacitance (Cd) is discharged to the ground voltage
(=V
SS) level. Then, the output voltage maintains the “Low” level while the sense pin voltage increases again to reach the
release voltage (V
SEN< VDF +VHYS).
OPERATIONAL EXPLANATION
Figure 1: Typical application circuit example
Figure 2: The timing chart of Figure 1
*The XC6118N series (N-ch open
drain output) requires a pull-up
resistor for pulling up output.
Sense Pin Voltage: V
SEN
(MIN.:0V MAX.:6.0V)
Delay Capacitance Pin Threshold Voltage: V
TCD
Release Voltage: V
DF
+V
HYS
Output Voltage Pin Voltage: V
OUT
(MIN.:V
SS
MAX:V
IN
)
Delay Capacitance Pin Voltage: V
CD
(MIN.:V
SS,
MAX.:V
IN
)
Detect Voltage: V
DF
Vref
Comparator
Inverter
R1
R2
R3
M5
SEN=R1+R2+R3
M2
M1
M3
VOUT
VSS
R
delay
Cd
VSEN
VIN
VIN
VSEN
Cd
M4
12/20
XC6118 Series
When the sense pin voltage continues to increase up to the release voltage level (VDF+VHYS), the N-ch transistor (M1) for
the delay capacitance (Cd) discharge will be turned OFF, and the delay capacitance (Cd) will start discharging via a delay
resistor (R
DELAY
). The inverter (Inv
.
1) will operate as a comparator (Rise Logic Threshold: VTLH=VTCD, Fall Logic
Threshold: V
THL=VSS) while the sense pin voltage keeps higher than the detect voltage (VSEN > VDF).
While the delay capacitance pin voltage (VCD) rises to reach the delay capacitance pin threshold voltage (VTCD) with the
sense pin voltage equal to the release voltage or higher, the sense pin will be charged by the time constant of the RC series
circuit. Assuming the time to the release delay time (t
DR
), it can be given by the formula (1).
t
DR
=-R
DELAY
×
Cd
×
ln(1-V
TCD
/V
IN
)
(1)
The release delay time can also be briefly calculated with the formula (2) because the delay resistance is 2.0MΩ(TYP.) and
the delay capacitance pin threshold voltage is V
IN /2 (TYP.)
t
DR
=R
DELAY
×
Cd
×
0.69
(2)
*
R
DELAY
is 2.0M
Ω(
TYP.
As an example, presuming that the delay capacitance is 0.68μF, t
DR
is :
2.0
×
10
6
×
0.68
×
10
-6
×
0.69=938(ms)
* Note that the release delay time may remarkably be short when the delay capacitance (Cd) is not discharged to the ground
(=V
SS) level because time described in is short.
When the delay capacitance pin voltage reaches to the delay capacitance pin threshold voltage (VCD=VTCD), the inverter
(Inv.1) will be inverted. As a result, the output voltage changes into the “High” (=V
IN) level. t
DR0
is defined as time which
ranges from V
SEN=VDF+VHYS to the VOUT of “High” level without connecting to the Cd.
While the sense voltage is higher than the detect voltage (VSEN > VDF), the delay capacitance pin is charged until the delay
capacitance pin voltage becomes the input voltage level. Therefore, the output voltage maintains the “High”(=V
IN) level.
Function Chart
TRANSITION OF V
OUT
CONDITION *1
V
SEN
Cd
L
H
L
L
L
H
H
L
L
L
H
L
L
H
H
H
H
Release Delay Time Chart
DELAY
CAPACITANCE [Cd]
(μF)
RELEASE DELAY TIME [tDR]
(TYP.)
(ms)
RELEASE DELAY TIME [tDR] *2
(MIN. ~ MAX.)
(ms)
0.010 13.8 11.0 ~ 16.6
0.022 30.4 24.3 ~ 36.4
0.047 64.9 51.9 ~ 77.8
0.100 138 110 ~ 166
0.220 304 243 ~ 364
0.470 649 519 ~ 778
1.000 1380 1100 ~ 1660
Example
ex. 1) V
OUT
ranges from ‘L’ to ‘H’ in case of VSEN = ‘H’ (VDRVSEN), Cd=’H’ (VTCDCd) while VOUT is ‘L’.
ex. 2) V
OUT
maintains ‘H’ when Cd ranges from ‘H’ to ‘L’, VSEN=’H’ and Cd=’L’ when V
OUT
becomes ‘H’ in ex.1.
OPERATIONAL EXPLANATION (Continued)
* The release delay time values above are calculated by using the formula (2).
*2: The release delay time (t
DR
) is influenced by the delay capacitance Cd.
*1: V
OUT
transits from condition to because of the combination of V
SEN
and V
CD
,V
IN
.
V
IN
should be more than the lowest operation voltage.

XC6118N27AGR-G

Mfr. #:
Manufacturer:
Torex Semiconductor
Description:
Supervisory Circuits Voltage Detector with Separated Sense Pin and Delay Cap. Pin
Lifecycle:
New from this manufacturer.
Delivery:
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