4/20
XC6118 Series
XC6118xxxA/B
XC6118xxxC/D
PARAMETER SYMBOL RATINGS UNITS
Input Voltage V
IN
V
SS
-0.37.0
V
Output Current I
OUT
10 mA
XC6118C
(*1)
V
SS
-0.3V
IN
+0.3
Output Voltage
XC6118N
(*2)
V
OUT
V
SS
-0.37.0
V
Sense Pin Voltage V
SEN
V
SS
-0.37.0
V
Delay Capacitance Pin Voltage V
CD
V
SS
-0.3V
IN
+0.3
V
Delay Capacitance Pin Current I
CD
5.0 mA
USP-4 120
Power Dissipation
SOT-25
Pd
250
mW
Operating Ambient Temperature Ta
-40+85
o
C
Storage Temperature Tstg
-55+125
o
C
PARAMETER SYMBOL RATINGS UNITS
Input Voltage V
IN
V
SS
-0.37.0
V
Output Current I
OUT
10 mA
XC6118C
(*1)
V
SS
-0.3V
IN
+0.3
Output Voltage
XC6118N
(*2)
V
OUT
V
SS
-0.37.0
V
Sense Pin Voltage V
SEN
V
SS
-0.37.0
V
USP-4 120
Power Dissipation
SOT-25
Pd
250
mW
Operating Ambient Temperature Ta
-40+85
o
C
Storage Temperature Tstg
-55+125
o
C
A
BSOLUTE MAXIMUM RATINGS
NOTE:
*1: CMOS output
*2: N-ch open drain output
Ta=25
Ta=25
5/20
XC6118
Series
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX.
UNITS
CIRCUITS
Operating Voltage
V
IN
V
DF(T)
=0.85.0V
(*1)
1.0 6.0 V -
Detect Voltage
V
DF
V
IN
=1.06.0V E-1 V
Hysteresis Width
V
HYS
V
IN
=1.06.0V E-2 V
Detect Voltage
Line Regulation
ΔV
DF
/
(ΔV
IN
V
DF
)
V
IN
=1.06.0V ±0.1 %/V
Supply Current 1
(*2)
I
SS1
V
SEN
=V
DF
×0.9
V
IN
=1.0V
V
IN
=6.0V
0.4
0.4
1.0
1.0
μA
Supply Current 2
(*2)
I
SS2
V
SEN
=V
DF
×1.1
V
IN
=1.0V
V
IN
=6.0V
0.8
0.9
1.6
1.8
μA
I
OUT1
V
SEN
=0V, V
DS
=0.5V(Nch)
V
IN
=1.0V
V
IN
=2.0V
V
IN
=3.0V
V
IN
=4.0V
V
IN
=5.0V
V
IN
=6.0V
0.1
0.8
1.2
1.6
1.8
1.9
0.7
1.6
2.0
2.3
2.4
2.5
mA
Output Current
(*3)
I
OUT2
V
SEN
=6.0V,
V
DS
=0.5V(Pch)
V
IN
=1.0V
V
IN
=6.0V
-0.30
-1.00
-0.08
-0.70
mA
CMOS Output
(P-ch)
V
IN
=6.0V, V
SEN
=0V,
V
OUT
=0V, Cd: Open
-0.20
Leakage
Current
N-ch Open Drain
Output
I
LEAK
V
IN
=6.0V, V
SEN
=6.0V,
V
OUT
=6.0V, Cd: Open
0.20 0.40
μA
Temperature Characteristics
ΔV
DF
/
(ΔT
opr
V
DF
)
-40
o
CT
opr
85
o
C ±100 ppm/
o
C
Sense Resistance
(*4)
R
SEN
V
SEN
=5.0V V
IN
=0V E-4 MΩ
Delay Resistance
(*5)
R
DELAY
V
SEN
=6.0V V
IN
=5.0V
Cd=0V
1.6 2.0 2.4 MΩ
Delay capacitance pin
Sink Current
I
CD
Cd=0.5V, V
IN
=1.0V 200 μA
Delay Capacitance Pin Threshold
Voltage
V
TCD
V
SEN
=6.0V V
IN
=1.0V
V
SEN
=6.0V V
IN
=6.0V
0.4
2.9
0.5
3.0
0.6
3.1
V
Undefined Operation
(*6)
V
UNS
V
IN
=V
SEN
=01.0V 0.3 0.4 V
Detect Delay Time
(*7)
t
DF0
V
IN
=6.0V, V
SEN
=6.0V0V
Cd: Open
30 230 μs
Release Delay Time
(*8)
t
DR0
V
IN
=6.0V, V
SEN
=0V6.0V
Cd: Open
30 200 μs
ELECTRICAL CHARACTERISTICS
XC6118xxxA
Ta=25
NOTE:
*1: V
DF (T)
: Nominal detect voltage
*2: Current to the sense resistor is not included.
*3: I
OUT2
is applied only to the XC6118C series (CMOS output).
*4: It is calculated from the voltage value and the current value of the V
SEN
.
*5: It is calculated from the voltage value of the V
IN
and the current value of the Cd.
*6: Maximum V
OUT
voltage when V
IN
is changed from 0V to 1.0V under connecting the V
IN
pin to the V
SEN
pin.
This value is effective only to the XC6118C series (CMOS output).
*7: Delay time from the time of V
SEN
=V
DF
to the time of V
OUT
= 0.6V when the V
SEN
falls.
*8: Delay time from the time of V
IN
= V
DF
+V
HYS
to the time of V
OUT
= 5.4V when the V
SEN
rises.
6/20
XC6118 Series
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX.
UNITS
CIRCUITS
Operating Voltage
V
IN
V
DF(T)
=0.85.0V
(*1)
1.0 6.0 V -
Detect Voltage
V
DF
V
IN
=1.06.0V E-1 V
Hysteresis Width
V
HYS
V
IN
=1.06.0V E-3 V
Detect Voltage
Line Regulation
ΔV
DF
/
(ΔV
IN
V
DF
)
V
IN
=1.06.0V ±0.1 %/V
Supply Current 1
(*2)
I
SS1
V
SEN
=V
DF
×0.9
V
IN
=1.0V
V
IN
=6.0V
0.4
0.4
1.0
1.0
μA
Supply Current 2
(*2)
I
SS2
V
SEN
=V
DF
×1.1
V
IN
=1.0V
V
IN
=6.0V
0.8
0.9
1.6
1.8
μA
I
OUT1
V
SEN
=0V V
DS
=0.5V(Nch)
V
IN
=1.0V
V
IN
=2.0V
V
IN
=3.0V
V
IN
=4.0V
V
IN
=5.0V
V
IN
=6.0V
0.1
0.8
1.2
1.6
1.8
1.9
0.7
1.6
2.0
2.3
2.4
2.5
mA
Output Current
(*3)
I
OUT2
V
SEN
=6.0V V
DS
=0.5V(Pch)
V
IN
=1.0V
V
IN
=6.0V
-0.30
-1.00
-0.08
-0.70
mA
CMOS Output
(P-ch)
V
IN
=6.0V, V
SEN
=0V,
V
OUT
=0V, Cd: Open
-0.20
Leakage
Current
N-ch Open
Drain Output
I
LEAK
V
IN
=6.0V, V
SEN
=6.0V,
V
OUT
=6.0V, Cd: Open
0.20 0.40
μA
Temperature Characteristics
ΔV
DF
/
(ΔT
opr
V
DF
)
-40
o
CT
opr
85
o
C ±100 ppm/
o
C
Sense Resistance
(*4)
R
SEN
V
SEN
=5.0V V
IN
=0V E-4 MΩ
Delay Resistance
(*5)
R
DELAY
V
SEN
=6.0V V
IN
=5.0V Cd=0V 1.6 2.0 2.4 MΩ
Delay capacitance pin
Sink Current
I
CD
Cd=0.5V, V
IN
=1.0V 200 μA
Delay Capacitance Pin
Threshold Voltage
V
TCD
V
SEN
=6.0V V
IN
=1.0V
V
SEN
=6.0V V
IN
=6.0V
0.4
2.9
0.5
3.0
0.6
3.1
V
Undefined Operation
(*6)
V
UNS
V
IN
=V
SEN
=01.0V 0.3 0.4 V
Detect Delay Time
(*7)
t
DF0
V
IN
=6.0V, V
SEN
=6.0V0V
Cd: Open
30 230 μs
Release Delay Time
(*8)
t
DR0
V
IN
=6.0V, V
SEN
=0V6.0V
Cd: Open
30 200 μs
ELECTRICAL CHARACTERISTICS (Continued)
XC6118xxxB
Ta=25
NOTE:
*1: V
DF (T)
: Nominal detect voltage
*2: Current to the sense resistor is not included.
*3: I
OUT2
is applied only to the XC6118C series (CMOS output).
*4: It is calculated from the voltage value and the current value of the V
SEN
.
*5: It is calculated from the voltage value of the V
IN
and the current value of the Cd.
*6: Maximum V
OUT
voltage when V
IN
is changed from 0V to 1.0V under connecting the V
IN
pin to the V
SEN
pin.
This value is effective only to the XC6118C series (CMOS output).
*7: Delay time from the time of V
SEN
=V
DF
to the time of V
OUT
= 0.6V when the V
SEN
falls.
*8: Delay time from the time of V
IN
= V
DF
+V
HYS
to the time of V
OUT
= 5.4V when the V
SEN
rises.

XC6118N27AGR-G

Mfr. #:
Manufacturer:
Torex Semiconductor
Description:
Supervisory Circuits Voltage Detector with Separated Sense Pin and Delay Cap. Pin
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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