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MMBT3906LT1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 1994
August, 2017 − Rev. 13
1 Publication Order Number:
MMBT3906LT1/D
MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−40 Vdc
Collector−Base Voltage V
CBO
−40 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−200 mAdc
Collector Current − Peak (Note 3) I
CM
−800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) @ T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) @ T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
Device Package Shipping
†
ORDERING INFORMATION
MMBT3906LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT3906LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2A M G
G
2A = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
SMMBT3906LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBT3906LT3G SOT−23
(Pb−Free)
10,000 / Tape &
Reel
www.onsemi.com
MMBT3906L, SMMBT3906L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−40 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= −10 mAdc, I
E
= 0)
V
(BR)CBO
−40 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 −
Vdc
Base Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
I
BL
− −50
nAdc
Collector Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
I
CEX
− −50
nAdc
ON CHARACTERISTICS (Note 4)
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
H
FE
60
80
100
60
30
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−0.25
−0.4
Vdc
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
250 −
MHz
Output Capacitance
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 4.5
pF
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 10
pF
Input Impedance
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
h
ie
2.0 12
kW
Voltage Feedback Ratio
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
h
re
0.1 10
X 10
−4
Small−Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
h
fe
100 400
−
Output Admittance
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
h
oe
3.0 60
mmhos
Noise Figure
(I
C
= −100 mAdc, V
CE
= −5.0 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
NF
− 4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc,
I
C
= −10 mAdc, I
B1
= −1.0 mAdc)
t
d
− 35
ns
Rise Time t
r
− 35
Storage Time
(V
CC
= −3.0 Vdc, I
C
= −10 mAdc,
I
B1
= I
B2
= −1.0 mAdc)
t
s
− 225
ns
Fall Time t
f
− 75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBT3906L, SMMBT3906L
www.onsemi.com
3
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
C
S
< 4 pF*
3 V
275
10 k
C
S
< 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25°C
T
J
= 125°C
Figure 5. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
Figure 6. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 30 50
200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0
30 50
200
10
30
7
20
t , FALL TIME (ns)
f
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
P1-P3P4-P6P7-P7

MMBT3906LT1G

Mfr. #:
Buy MMBT3906LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V PNP
Lifecycle:
New from this manufacturer.
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