MMBT3906LT1G

MMBT3906L, SMMBT3906L
www.onsemi.com
4
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= −5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
Figure 7.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 8.
R
g
, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 100 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50 mA
h PARAMETERS
(V
CE
= −10 Vdc, f = 1.0 kHz, T
A
= 25°C)
Figure 9. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 11. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
fe
m
-4
70
30
0.7
7.0
0.7
7.0
7.0
3.0
0.7
0.3
0.7
7.0
0.7
7.0
MMBT3906L, SMMBT3906L
www.onsemi.com
5
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
100
1000
10
1.0
T
J
= 150°C
25°C
-55°C
h
FE
, DC CURRENT GAIN
10 100 1000
V
CE
= 1 V
Figure 14. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3906L, SMMBT3906L
www.onsemi.com
6
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
0.05
0.10
0.15
0.25
0.35
0.40
0.50
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 17. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.30
I
C
/I
B
= 10
150°C
25°C
−55°C
I
C
/I
B
= 10
150°C
25°C
−55°C
V
CE
= 1 V
150°C
25°C
−55°C
0.20
0.45
Figure 18. Current Gain Bandwidth vs.
Collector Current
I
C
, COLLECTOR CURRENT (mA)
10001001010.1
10
100
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 2 V
T
A
= 25°C
V
CE
(Vdc)
1001010.10.01
0.001
0.01
0.1
1
IC (A)
Single Pulse Test
@ T
A
= 25°C
Thermal Limit
100 ms
1 s
10 ms
1 ms
I
C
, COLLECTOR CURRENT (mA)
-0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100
200
-1.0
-1.5
-2.0
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
, TEMPERATURE COEFFICIENTS (mV/ C)°
V
q
Figure 19. Temperature Coefficients Figure 20. Safe Operating Area

MMBT3906LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 200mA 40V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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