AOD4185/AOI4185
Symbol Min Typ Max Units
BV
DSS
-40 V
-1
T
J
=55°C -5
I
GSS
±100
nA
V
GS(th)
-1.7 -1.9 -3 V
I
D(ON)
-115 A
12.5 15
T
J
=125°C 19 23
16 20
g
FS
50 S
V
SD
-0.72 -1 V
I
S
-20 A
C
iss
2550 pF
C
oss
280 pF
C
rss
190 pF
R
g
2.5 4 6 Ω
Q
g
(-10V) 42 55 nC
Q
g
(-4.5V) 18.6
Q
gs
7 nC
Q
gd
8.6 nC
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250µA
On state drain current
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-20A
Reverse Transfer Capacitance
Output Capacitance
DYNAMIC PARAMETERS
I
DSS
µA
Drain-Source Breakdown Voltage
I
D
=-250µA, V
GS
=0V
V
DS
=-40V, V
GS
=0V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
mΩ
Gate Drain Charge
V
GS
=0V, V
DS
=-20V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, I
D
=-15A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-20A
Maximum Body-Diode Continuous Current
Input Capacitance
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, V
DS
=-20V,
I
D
=-20A
Total Gate Charge
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
t
r
20 ns
t
D(off)
55 ns
t
f
30 ns
t
rr
38 49
ns
Q
rr
47 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=-20A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-20V, R
L
=1Ω,
R
GEN
=3Ω
Turn-Off Fall Time
TBD
TBD
Body Diode Reverse Recovery Charge
I
F
=-20A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C. The power dissipation P
DSM
and current rating I
DSM
are
based on T
J(MAX)
=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1
ST
2008).
Rev4: April, 2012
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
