AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45
-V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20 25 30 35 40
Capacitance (pF)
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
10
100
1000
10000
Power (W)
C
oss
C
0.1
1
10
100
1000
-I
D
(Amps)
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
=25°C
V
DS
=-20V
I
D
=-20A
T
J(Max)
=175°
C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
150
mJ
10
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Z
θ
θ
θ
θJc
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
0.1 1 10 100
-V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
T
=25°C
Single Pulse
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.4°C/W
T
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
