TIP29B-S

TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
1
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
TIP30 Series
30 W at 25°C Case Temperature
1 A Continuous Collector Current
3 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100 ,
V
BE(off)
= 0, R
S
= 0.1, V
CC
= 20 V.
TINUEULAVLOBMYSGNITAR
Collector-base voltage (I
E
= 0)
TIP29
TIP29A
TIP29B
TIP29C
V
CBO
80
100
120
140
V
Collector-emitter voltage (I
B
= 0)
TIP29
TIP29A
TIP29B
TIP29C
V
CEO
40
60
80
100
V
Emitter-base voltage V
EBO
5 V
Continuous collector current I
C
1 A
I)1 etoN ees( tnerruc rotcelloc kaeP
CM
3 A
Continuous base current I
B
0.4 A
Continuous device dissipation at (or below) 25°C P)2 etoN ees( erutarepmet esac
tot
30 W
P)3 etoN ees( erutarepmet ria eerf C°52 )woleb ro( ta noitapissid ecived suounitnoC
tot
2 W
IL½)4 etoN ees( ygrene daol evitcudni depmalcnU
C
2
32 mJ
Tegnar erutarepmet noitcnuj gnitarepO
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Tsdnoces 01 rof esac morf mm 2.3 erutarepmet daeL
L
250 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 2C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
I
B
= 0
TIP29
TIP29A
TIP29B
TIP29C
40
60
80
100
V
I
CES
Collector-emitter
cut-off current
V
CE
= 80 V
V
CE
=100 V
V
CE
=120 V
V
CE
=140 V
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
TIP29
TIP29A
TIP29B
TIP29C
0.2
0.2
0.2
0.2
mA
I
CEO
Collector cut-off
current
V
CE
= 30 V
V
CE
= 60 V
I
B
=0
I
B
=0
TIP29/29A
TIP29B/29C
0.3
0.3
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V I
C
=0 1 mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
I
C
=0.2A
I
C
= 1A
(see Notes 5 and 6)
40
15 75
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 125 mA I
C
= 1 A (see Notes 5 and 6) 0.7 V
V
BE
Base-emitter
voltage
V
CE
= 4 V I
C
= 1 A (see Notes 5 and 6) 1.3 V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V I
C
= 0.2 A f = 1 kHz 20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V I
C
= 0.2 A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 4.17 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
MIN TYP MAX UNIT
t
on
Tu r n -o n t i m e I
C
= 1 A
V
BE(off)
= -4.3 V
I
B(on)
= 0.1 A
R
L
= 30
I
B(off)
= -0.1 A
t
p
= 20 µs, dc 2%
0.5 µs
t
off
Turn-off time s
OBSOLETE
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
3
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·001 0·01 0·1 1·0
h
FE
- DC Current Gain
1
10
100
1000
TCS631AD
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - mA
0·1 1·0 10 100 1000
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0·01
0·1
1·0
10
TCS631AE
I
C
= 100 mA
I
C
= 300 mA
I
C
= 1 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·01 0·1 1·0
V
BE
- Base-Emitter Voltage - V
0·5
0·6
0·7
0·8
0·9
1·0
TCS631AF
V
CE
= 4 V
T
C
= 25°C
OBSOLETE

TIP29B-S

Mfr. #:
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 80V 1A NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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