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TIP29B-S

P1-P3P4-P4
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
4
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
1·0 10 100 1000
I
C
- Collector Current - A
0·01
0·1
1·0
10
100
SAS631AC
TIP29
TIP29A
TIP29B
TIP29C
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - °C
0 255075100125150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
TIS631AB
OBSOLETE
P1-P3P4-P4

TIP29B-S

Mfr. #:
Buy TIP29B-S
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 80V 1A NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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