www.vishay.com Document Number: 91101
4 S09-2236-Rev. D, 05-Apr-10
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
C
iss
C
oss
C
rss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 20 40 60 80 100 120
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V )
For test circuit
see figure 13
? ?
?
???
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to Drain Voltage (V)
0.1
1.0
10.0
100.0
I
SD
, Reverse Drain Current (A)
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
1 10 100 1000 10000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
, Drain-to-Source Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1 ms
10 ms
Operation in this area limited
by r
DS(on)
100 µs
