IS62WV102416BLL-25MLI

Integrated Silicon Solution, Inc. — www.issi.com 1

Rev. B

04/22/2015

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out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specication before relying on any published informa-

tion and before placing orders for products.

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the life support system or to signicantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its

satisfaction, that:

1M x 16 HIGH-SPEED LOW POWER

ASYNCHRONOUS CMOS STATIC RAM

APRIL 2015

FEATURES

• High-speedaccesstimes:

25,35ns

• High-performance,low-powerCMOSprocess

• Multiplecenterpowerandgroundpinsforgreater

noiseimmunity

• EasymemoryexpansionwithCS1andOEoptions

 speed=35nsforVdd1.65Vto2.2V

Vdd2.4Vto3.6V(IS62/65WV102416BLL)

 speed=25nsforVdd2.4Vto3.6V

• Packagesavailable:

–

48-ballminiBGA(9mmx11mm)

 –48-pinTSOP(TypeI)

• IndustrialandAutomotiveTemperatureSupport

• Lead-freeavailable

• Datacontrolforupperandlowerbytes

FUNCTIONAL BLOCK DIAGRAM

high-performanceandlowpowerconsumptiondevices.

WhenCS1isHIGH(deselected)orwhenCS2isLOW

(deselected)orwhen CS1isLOW,CS2isHIGHandboth

LBandUBareHIGH,thedeviceassumesastandbymode

atwhichthepowerdissipationcanbereduceddownwith

CMOSinputlevels.

EasymemoryexpansionisprovidedbyusingChipEnable

andOutputEnableinputs.TheactiveLOWWriteEnable

(WE)controlsbothwritingandreadingofthememory.A

databyteallowsUpperByte(UB)andLowerByte(LB)

Rev. B

A0-A19 AddressInputs

I/O0-I/O15 DataInputs/Outputs

CS1,CS2 ChipEnableInput

Integrated Silicon Solution, Inc. — www.issi.com 3

Rev. B

04/22/2015