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IRFU3410PBF

P1-P3P4-P6P7-P9P10-P11
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 100 V
V
GS
Gate-to-Source Voltage ± 20
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 31
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 22 A
I
DM
Pulsed Drain Current 125
P
D
@T
C
= 25°C Maximum Power Dissipation 110 W
P
D
@T
A
= 25°C Maximum Power Dissipation 3.0
Linear Derating Factor 0.71 mW°C
dv/dt Peak Diode Recovery dv/dt 15 V/ns
T
J
Operating Junction and -55 to + 175 °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
www.irf.com 1
12/03/04
IRFR3410PbF
IRFU3410PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
100V 39mΩ 31A
Notes through are on page 10
D-Pak
IRFR3410
I-Pak
IRFU3410
PD - 95514A
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.4
R
θJA
Junction-to-Ambient (PCB mount)* ––– 40 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
Absolute Maximum Ratings
IRFR/U3410PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 33 ––– ––– S V
DS
= 25V, I
D
= 18A
Q
g
Total Gate Charge ––– 37 56 I
D
= 18A
Q
gs
Gate-to-Source Charge ––– 10 ––– nC V
DS
= 50V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 11 ––– V
GS
= 10V,
t
d(on)
Turn-On Delay Time ––– 12 ––– V
DD
= 50V
t
r
Rise Time ––– 27 ––– I
D
= 18A
t
d(off)
Turn-Off Delay Time ––– 40 ––– R
G
= 9.1Ω
t
f
Fall Time ––– 13 ––– V
GS
= 10V
C
iss
Input Capacitance ––– 1690 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 220 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 26 ––– pF ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1640 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 130 ––– V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 250 ––– V
GS
= 0V, V
DS
= 0V to 80V
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 140 mJ
I
AR
Avalanche Current ––– 18 A
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 18A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 84 ––– ns T
J
= 25°C, I
F
= 18A
Q
rr
Reverse RecoveryCharge ––– 260 ––– nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
31
125
A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.11 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 34 39 mΩ V
GS
= 10V, I
D
= 18A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -20V
I
GSS
I
DSS
Drain-to-Source Leakage Current
IRFR/U3410PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 175°C
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0 5.0 6.0 7.0 8.0 9.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
20µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.0
1.0
2.0
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 30A
V
GS
= 10V
P1-P3P4-P6P7-P9P10-P11

IRFU3410PBF

Mfr. #:
Buy IRFU3410PBF
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET MOSFT 100V 31A 39mOhm 37nC
Lifecycle:
New from this manufacturer.
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