IRFU3410PBF

Mfr. #:: IRFU3410PBF
Manufacturer:: Infineon Technologies
Description:: Darlington Transistors MOSFET MOSFT 100V 31A 39mOhm 37nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFU3410PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRFU3410PBF Datasheet IRFU3410PBF Datasheet (P4-P6)IRFU3410PBF Datasheet (P7-P9)IRFU3410PBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: I

Product Category: FETs - Single

Packaging: Tube

Unit-Weight: 0.139332 oz

Mounting-Style: Through Hole

Package-Case: IPAK-3

Technology: Si

Number-of-Channels: 1 Channel

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 110 W

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 31 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistance: 39 mOhms

Transistor-Polarity: N-Channel

Qg-Gate-Charge: 37 nC

Tags: IRFU3410P, IRFU3410, IRFU34, IRFU3, IRFU, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFU3410PBF Description

***ure Electronics: Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 100V, 31A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:39ohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; Termination Type:Through Hole; Turn Off Time:13ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
IRFU3410PBF DISTI # 21065072	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK Tube	3931	2500:$0.3196 1000:$0.3290 500:$0.3389 250:$0.3495 100:$0.3608 33:$0.3728
IRFU3410PBF DISTI # IRFU3410PBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 31A I-PAK RoHS: Compliant Min Qty: 1 Container: Tube	2915In Stock	1000:$0.4744 500:$0.6009 100:$0.7748 10:$0.9800 1:$1.1100
IRFU3410PBF DISTI # C1S322000496844	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	3931	1000:$0.5240 500:$0.5710 100:$0.6950 50:$0.7790 25:$0.8570 5:$2.1400
IRFU3410PBF DISTI # IRFU3410PBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU3410PBF) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	3000:$0.3309 6000:$0.3189 12000:$0.3069 18000:$0.2969 30000:$0.2919
IRFU3410PBF DISTI # SP001578398	Infineon Technologies AG	Trans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK (Alt: SP001578398) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.9489 10:€0.8119 25:€0.8099 50:€0.8079 100:€0.6209 500:€0.5479 1000:€0.4329
IRFU3410PBF DISTI # 70018370	Infineon Technologies AG	IRFU3410PBF N-channel MOSFET Transistor,31 A,100 V,3-Pin IPAK RoHS: Compliant	0	15:$1.6400
IRFU3410PBF DISTI # 942-IRFU3410PBF	Infineon Technologies AG	MOSFET MOSFT 100V 31A 39mOhm 37nC RoHS: Compliant	147	1:$1.1100 10:$0.9450 100:$0.7260 500:$0.6410 1000:$0.5060 2500:$0.4490
IRFU3410PBF	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	1050	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
IRFU3410PBF	International Rectifier	Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant	73	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
IRFU3410PBF DISTI # 9075107P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 100V 31A IPAK, TU	2145	150:£0.5440
IRFU3410PBF DISTI # 8659028	Infineon Technologies AG	MOSFET, N, 100V, 31A, I-PAK RoHS: Compliant	0	1:$1.7600 10:$1.5000 100:$1.1500 500:$1.0200 1000:$0.8020 2500:$0.7110

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	Mfr.#: IRFU3411 OMO.#: OMO-IRFU3411-1190	New and Original
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Availability

Stock:: Available
On Order:: 3000
Enter Quantity:

Current price of IRFU3410PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.42~~; ~~$0.42~~

10: ~~$0.40~~; ~~$3.97~~

100: ~~$0.38~~; ~~$37.65~~

500: ~~$0.36~~; ~~$177.80~~

1000: ~~$0.33~~; ~~$334.70~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRFU3410PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes