Philips Semiconductors
BSH108
N-channel enhancement mode field-effect transistor
Product specification Rev. 02 — 25 October 2000 5 of 13
9397 750 07652
© Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
=10µA; V
GS
=0V
T
j
=25°C3040− V
T
j
= −55 °C27−−V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C 1 1.5 2 V
T
j
= 150 °C 0.5 −−V
T
j
= −55 °C −−3.2 V
I
DSS
drain-source leakage current V
DS
=24V; V
GS
=0V
T
j
=25°C − 0.01 1.0 µA
T
j
= 150 °C −−10 µA
I
GSS
gate-source leakage current V
GS
= ±10 V; V
DS
=0V − 10 100 nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=1A;Figure 7 and 8
T
j
=25°C − 77 120 mΩ
V
GS
=5V; I
D
=1A;Figure 7 and 8
T
j
=25°C − 102 140 mΩ
T
j
= 150 °C − 170 240 mΩ
Dynamic characteristics
g
fs
forward transconductance V
DS
=10V; I
D
=1A;Figure 11 2 4.5 − S
Q
g(tot)
total gate charge V
DD
=15V; V
GS
=10V; I
D
=5A;Figure 14 − 6.4 10 nC
Q
gs
gate-source charge − 0.5 − nC
Q
gd
gate-drain (Miller) charge − 1.3 − nC
C
iss
input capacitance V
GS
=0V; V
DS
= 10 V; f = 1 MHz; Figure 12 − 190 − pF
C
oss
output capacitance − 70 − pF
C
rss
reverse transfer capacitance − 50 − pF
t
d(on)
turn-on delay time V
DD
=10V; R
L
=10Ω; V
GS
=10V; R
G
=6Ω−3 − ns
t
r
rise time − 8 − ns
t
d(off)
turn-off delay time − 15 − ns
t
f
fall time − 26 − ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 0.83 A; V
GS
=0V;Figure 13 − 0.8 1.2 V
t
rr
reverse recovery time I
S
= 1 A; dI
S
/dt = −100 A/µs; V
GS
=0V;
V
DS
=25V
− 25 − ns
Q
r
recovered charge − 20 − nC
