Philips Semiconductors
BSH108
N-channel enhancement mode field-effect transistor
Product specification Rev. 02 — 25 October 2000 6 of 13
9397 750 07652
© Philips Electronics N.V. 2000. All rights reserved.
T
j
=25°CT
j
=25°C and 150 °C; V
DS
> I
D
× R
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa81
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
DS
(V)
I
D
(A)
3 V
2 V
2.2 V
2.4 V
2.6 V
V
GS
= 2.8 V
3.4 V
T
j = 25
o
C
5 V
10 V
03aa83
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 0.5 1 1.5 2 2.5 3 3.5 4
V
GS
(V)
I
D
(A)
V
DS
> I
D
X R
DSon
T
j
= 25
o
C
150
o
C
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
I
D
(A)
R
DSon
(Ω)
V
GS
= 10 V
T
j
= 25
o
C
3 V
5 V
2.2 V
2.4 V 2.6 V
2.8 V
3.4 V
03aa27
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-60 -20 20 60 100 140 180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
