JAN1N6153

© Semiconductor Components Industries, LLC, 2013
October, 2016 Rev. 1
1 Publication Order Number:
MMBZ16VAL/D
MMBZ16V, SZMMBZ16V
40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
SOT23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Standard Zener Breakdown Voltage Range 15.2 V to 16.80 V
Peak Power 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
ESD Rating:
Class 3B (> 16 kV) per the Human Body Model
Class C (> 400 V) per the Machine Model
ESD Rating of IEC6100042 Level 4, ±30 kV Contact Discharge
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
This is a PbFree Device
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
SOT23
CASE 318
STYLE 12
CATHODE 1
3 ANODE
CATHODE 2
MARKING DIAGRAM
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
MMBZ16V, SZMMBZ16V
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1) P
pk
40 W
Total Power Dissipation on FR5 Board (Note 2)
@ T
A
= 25°C
Derate above 25°C
°P
D
°
225
1.8
mW°
mW/°C
Thermal Resistance JunctiontoAmbient
R
q
JA
556 °C/W
Total Power Dissipation on Alumina Substrate (Note 3)
@ T
A
= 25°C
Derate above 25°C
°P
D
°
300
2.4
°mW
mW/°C
Thermal Resistance JunctiontoAmbient
R
q
JA
417 °C/W
Junction and Storage Temperature Range T
J
, T
stg
55 to +150 °C
Lead Solder Temperature Maximum (10 Second Duration) T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above T
A
= 25°C per Figure 6.
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device Marking Package Shipping
MMBZ16VALT1G 16A
SOT23
(PbFree)
3,000 / Tape & Reel
SZMMBZ16VALT1G* 16A
MMBZ16VTALT1G 16T
SZMMBZ16VTALT1G* 16T
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable.
MMBZ16V, SZMMBZ16V
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA) (5% Tolerance) 40 WATTS
Device*
Device
Marking
V
RWM
I
R
@
V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 5)
QV
BR
V
BR
(Note 4) (V) @ I
T
V
C
I
PP
Volts nA Min Nom Max mA V A mV/5C
MMBZ16VALT1G 16A 13 50 15.20 16 16.80 1.0 23 1.7 13.8
(V
F
= 0.9 V Max @ I
F
= 10 mA) (2% Tolerance) 40 WATTS
Device*
Device
Marking
V
RWM
I
R
@
V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 5)
QV
BR
V
BR
(Note 4) (V) @ I
T
V
C
I
PP
Volts nA Min Nom Max mA V A
mV/5C
MMBZ16VTALT1G 16T 13 50 15.68 16 16.32 1.0 23 1.7 13.8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
* Include SZ-prefix devices where applicable.

JAN1N6153

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Hi Rel TVS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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