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JAN1N6153
P1-P3
P4-P6
P7-P7
MMBZ16V
, SZMMBZ16V
www
.onsemi.com
4
TYPICAL CHARACTERISTICS
−
40
+
50
18
Figure 1. T
ypical Breakdown V
oltage
versus T
emperature
(Upper curve is for bidirectional mode, lower curve is for
unidirectional mode)
0
TEMPERA
TURE (
°
C)
+
100
+
150
15
12
9
6
3
0
−
40
+
25
1000
Figure 2. T
ypical Leakage Current
versus T
emperature
TEMPERA
TURE (
°
C)
+
85
+
125
100
10
1
0.1
0.01
BREAKDOWN VOL
T
AGE (VOL
TS)
(V
BR
@ I
T
)
I
R
(nA)
Figure 3. T
ypical Capacitance versus Bias V
oltage
(Upper curve is for unidirectional mode, lower curve is for
bidirectional mode)
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
TEMPERA
TURE (
°
C)
FR
−
5 BOARD
ALUMINA SUBSTRA
TE
01
2
3
90
70
60
40
30
10
0
C, CAP
ACIT
ANCE (pF)
BIAS (V)
50
20
P
D
, POWER DISSIP
A
TION (mW)
Figure 4. Steady State Power Derating Curve
21
80
MMBZ16V
, SZMMBZ16V
www
.onsemi.com
5
TYPICAL CHARACTERISTICS
0.1
1
10
100
1000
1
10
100
Power is defined as V
RSM
x I
Z
(pk) where V
RSM
is
the clamping voltage at
I
Z
(pk).
PW
, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECT
ANGULAR
W
A
VEFORM, T
A
= 25
°
C
BIDIRECTIONAL
Figure 5. Pulse W
aveform
V
ALUE (%)
100
50
0
01
2
3
4
t, TIME (ms)
Figure 6. Pulse Derating Curve
PULSE WIDTH (t
P
) IS DEFINED
AS THA
T POINT WHERE THE
PEAK CURRENT DECA
YS TO
50% OF I
PP
.
HALF V
ALUE
−
I
PP
2
t
P
t
r
≤
10
m
s
PEAK V
ALUE
−
I
PP
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERA
TURE (
°
C)
Figure 7. Maximum Non
−
repetitive Surge
Power
, P
pk
versus PW
Figure 8. Maximum Non
−
repetitive Surge
Power
, P
pk
(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW
, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECT
ANGULAR
W
A
VEFORM, T
A
= 25
°
C
BIDIRECTIONAL
Power is defined as V
Z
(NOM) x I
Z
(pk) where
V
Z
(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
PEAK PULSE DERA
TING IN % OF PEAK
POWER OR CURRENT @ T
A
= 25
°
C
P
pk
, PEAK SURGE POWER (W)
P
pk
, PEAK SURGE POWER (W)
MMBZ16V
, SZMMBZ16V
www
.onsemi.com
6
TYPICAL COMMON ANODE APPLICA
TIONS
A dual junction common anode design in a SOT
−
23
package
protects two separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when
board space is at a premium. T
wo
simplified examples
of TVS applications are illustrated below
.
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
A
SZMMBZ16V
AL
T1G
Thru
SZMMBZ16VT
AL
T1G
GND
Computer Interface Protection
B
C
D
Microprocessor Protection
I/O
RAM
ROM
CLOCK
CPU
CONTROL BUS
ADDRESS BUS
DA
T
A BUS
GND
V
GG
V
DD
SZMMBZ16V
AL
T1G
Thru
SZMMBZ16VT
AL
T1G
SZMMBZ16V
AL
T1G
Thru
SZMMBZ16VT
AL
T1G
P1-P3
P4-P6
P7-P7
JAN1N6153
Mfr. #:
Buy JAN1N6153
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Hi Rel TVS
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
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Union
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