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MRF8S21100HSR3

P1-P3P4-P6P7-P9P10-P12P13-P15
MRF8S21100HR3 MRF8S21100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDM A and LTE base station applic ations with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
! Typical Single--Carrier W--CDMA Performance: V
DD
=28Volts,I
DQ
=
700 mA, P
out
= 24 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz 17.9 33.0 6.4 --38.7
2140 MHz 18.1 33.0 6.4 --38.2
2170 MHz 18.3 33.4 6.3 --37.2
! Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
! Typical P
out
@ 1 dB Compression Point ≃ 100 Watts CW
Features
! 100% PAR Tested for Guaranteed Output Power Capability
! Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
! Internally Matched for Ease of Use
! Integrated ESD Protection
! Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
! Designed for Digital Predistortion Error Correction Systems
! Optimized for Doherty Applications
! RoHS Compliant
! In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +65 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 #C
Case Operating Temperature T
C
150 #C
Operating Junction Temperature
(2,3)
T
J
225 #C
CW Operation @ T
C
=25#C
Derate above 25#C
CW 108
0.57
W
W/#C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 77#C, 24 W CW, 28 Vdc, I
DQ
= 700 mA, 2140 MHz
Case Temperature 80#C, 100 W CW
(1)
,28Vdc,I
DQ
= 700 mA, 2140 MHz
R
$
JC
0.48
0.45
#C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S21100H
Rev. 1, 3/201 1
Freescale Semiconductor
Technical Data
2110--2170 MHz, 24 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S21100HR3
MRF8S21100HSR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S21100HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S21100HR3
% Freescale Semiconductor, Inc., 2010--2011.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S21100HR3 MRF8S21100HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (T
A
=25#C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
— — 1 &Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 &Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 150 &Adc)
V
GS(th)
1.2 2.0 2.7 Vdc
Gate Quiescent Voltage
(V
DS
=28Vdc,I
D
= 700 mAdc)
V
GS(Q)
— 2.7 — Vdc
Fixture Gate Quiescent Voltage
(1)
(V
DD
=28Vdc,I
D
= 700 mAdc, Measured in Functional Test)
V
GG(Q)
4.0 5.4 7.0 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1.5Adc)
V
DS(on)
0.1 0.24 0.3 Vdc
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 700 mA, P
out
= 24 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Power Gain
G
ps
17.2 18.3 20.2 dB
Drain Efficiency "
D
31.0 33.4 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.9 6.3 — dB
Adjacent Channel Power Ratio ACPR — --37.2 --36.0 dBc
Input Return Loss IRL — -- 1 2 -- 7 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 700 mA, P
out
=24WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Frequency
G
ps
(dB)
"
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 17.9 33.0 6.4 --38.7 -- 1 8
2140 MHz 18.1 33.0 6.4 --38.2 -- 1 6
2170 MHz 18.3 33.4 6.3 --37.2 -- 1 2
1. V
GG
=2xV
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF8S21100HR3 MRF8S21100HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 700 mA, 2110--2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW P1dB — 100 — W
IMD Symmetry @ 36 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMD
sym
— 40 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 50 — MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
=24WAvg. G
F
— 0.4 — dB
Gain Variation over Temperature
(-- 30#Cto+80#C)
(G — 0.011 — dB/#C
Output Power Variation over Temperature
(-- 30#Cto+80#C)
(1)
(P1dB — 0.005 — dB/#C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
P1-P3P4-P6P7-P9P10-P12P13-P15

MRF8S21100HSR3

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Description:
RF MOSFET Transistors HV8 2.1GHZ 100W
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