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MRF8S21100HSR3

P1-P3P4-P6P7-P9P10-P12P13-P15
MRF8S21100HR3 MRF8S21100HSR3
7
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO-- AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
8
RF Device Data
Freescale Semiconductor
MRF8S21100HR3 MRF8S21100HSR3
V
DD
=28Vdc,I
DQ
= 700 mA, P
out
=24WAvg.
f
MHz
Z
source
)
Z
load
)
2060 4.41 -- j6.05 3.03 -- j3.64
2080 4.38 -- j5.67 2.96 -- j3.45
2100 4.33 -- j5.29 2.89 -- j3.26
2120 4.33 -- j4.91 2.83 -- j3.10
2140 4.33 -- j4.54 2.75 -- j2.94
2160 4.33 -- j4.17 2.69 -- j2.75
2180 4.31 -- j3.80 2.62 -- j2.50
2200 4.32 -- j3.39 2.65 -- j2.24
2220 4.35 -- j2.99 2.67 -- j2.04
Z
source
= Test circuit impedance as measured from
gate to ground.
Z
load
= Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF8S21100HR3 MRF8S21100HSR3
9
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
33
P
in
, INPUT POWER (dBm)
V
DD
=28
V
dc, I
DQ
= 700 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
52
50
48
34
53
51
45
P
out
, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
49
54
56
3230 382928
55
47
46
27
Ideal
Actual
31 35 36 37
2170 MHz
2110 MHz
2140 MHz
2170 MHz
2110 MHz
2140 MHz
f
(MHz)
P1dB P3dB
W atts dBm Watts dBm
2110 141 51.5 166 52.2
2140 141 51.5 162 52.1
2170 138 51.4 158 52.0
Test Impedances per Compression Level
f
(MHz)
Z
source
)
Z
load
)
2110 P1dB 3.50 -- j7.47 1.65 -- j3.64
2140 P1dB 4.21 -- j7.53 1.57 -- j3.70
2170 P1dB 6.39 -- j8.09 1.66 -- j3.68
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
P1-P3P4-P6P7-P9P10-P12P13-P15

MRF8S21100HSR3

Mfr. #:
Buy MRF8S21100HSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV8 2.1GHZ 100W
Lifecycle:
New from this manufacturer.
Delivery:
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