Preliminary Data Sheet
μ
PA2379T1P
R07DS0703EJ0100
Rev.1.00
Mar 19, 2012
N-CHANNEL MOSFET FOR SWITCHING
DESCRIPTION
The
μ
PA2379T1P is a switching device, which can be driven directly by a 2.5 V power source.
The
μ
PA2379T1P features a low on-state resistance and excellent switching characteristics, and is suitable for single
cell LiB application.
FEATURES
• 2.5 V drive available
• Ultra Low on-state resistance
⎯ R
SS(on)1
= 11.9 mΩ MAX. (V
GS
= 4.5 V, I
S
= 4.0 A)
⎯ R
SS(on)2
= 12.8 mΩ MAX. (V
GS
= 4.0 V, I
S
= 4.0 A)
⎯ R
SS(on)3
= 13.0 mΩ MAX. (V
GS
= 3.8 V, I
S
= 4.0 A)
⎯ R
SS(on)4
= 17.6 mΩ MAX. (V
GS
= 3.1 V, I
S
= 4.0 A)
⎯ R
SS(on)5
= 26.0 mΩ MAX. (V
GS
= 2.5 V, I
S
= 4.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
Part No. Lead Plating Packing Package
μ
PA2379T1P-E1-A
∗
1
Ni/Au Reel 5000 p/reel 6-pin EFLIP-LGA
Note:
∗
1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Item Symbol Ratings Unit
Source to Source Voltage (V
GS
= 0 V) V
SSS
12.0 V
Gate to Source Voltage (V
DS
= 0 V) V
GSS
±8.0 V
Source Current (DC)
∗
1
I
S(DC)
±8.0 A
Source Current (pulse)
∗
2
I
S(pulse)
±80 A
Total Power Dissipation (2 units)
∗
1
P
T1
1.8 W
Channel Temperature T
ch
150 °C
Storage Temperature T
stg
−55 to +150 °C
Note:
∗
1. Mounted on ceramic board of 50 cm
2
×1.0 mmt
∗
2. PW ≤ 10
μ
s, Duty Cycle ≤ 1%
R07DS0703EJ0100 Rev.1.00 Page 1 of 10
Mar 19, 2012