UPA2379T1P-E1-A

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PA2379T1P Chapter Title
Example of application circuit
LI-ion battery (1 cell) protection circuit
Battery protection IC
P+
P
Lithium-
Ion battery
cell
Protection circuit
Lithium-Ion battery pack
μ
PA2379T1P
R07DS0703EJ0100 Rev.1.00 Page 7 of 10
Mar 19, 2012
μ
PA2379T1P Chapter Title
PACKAGE DRAWINGS (UNIT: mm)
6-pin EFLIP-LGA
Equivalent Circuit
FET1
Gate1
FET2
Gate2
Body Diode
Protection
Diode
Source2
Source1
Gate
Remark The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0703EJ0100 Rev.1.00 Page 8 of 10
Mar 19, 2012
μ
PA2379T1P Chapter Title
USAGE CAUTIONS
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following
contents. If used exceeding recommended conditions, there is a possibility of causing the device and characteristic
degradation.
1. This device is very thin device and should be handled with caution for mechanical stress. The distortion applied to
the device should become below 2000 × 10
-6
. If the distortion exceeds 2000 × 10
-6
, the characteristic of a device
may be degraded and it may result in failure.
2. Please do not damage the device when you handle it. The use of metallic tweezers has the possibility of giving the
wound. Mounting with the nozzle with clean point is recommended.
3. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result failure.
4. When you wash the device mounted the board, carry out within our recommended conditions. If washed exceeding
the conditions, the characteristic of a device may be degraded and it may result in failure.
5. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance directly. If
it touches, the characteristic of a device may be degraded and it may result in failure.
6. Only the epoxy resin of the semiconductor grade is recommended as coating material.
7. Please refer to Figure 2 as an example of the Mounting Pad. Optimize the land pattern in consideration of density,
appearance of solder fillets, common difference, etc in an actual design.
8. The marking side of this device is an internal electrode. Please neither contact with terminals of other parts nor take
out the electrode.
Figure 1 Recommended soldering conditions of INFRARED REFLOW
260˚C MAX.
220˚C
to 60 s
160˚C
180˚C
(Main heating)
to 10 s
60 to 120 s
(Preheating)
Time(s)
Infrared Reflow Temperature Profile
Maximum temperature (Package's surface temperature) : 260˚C or below
Time at maximum temperature : 10 s or less
Time of temperature higher than 220˚C : 60 s or less
Preheating time at 160 to 180˚C : 60 to 120 s
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (Mass percentage) : 0.2% or less
Package's surface
temperature (˚C)
R07DS0703EJ0100 Rev.1.00 Page 9 of 10
Mar 19, 2012

UPA2379T1P-E1-A

Mfr. #:
Manufacturer:
Description:
Trans MOSFET N-CH 6-Pin EFLIP-LGA T/R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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