Characteristics STTH16L06C
4/10 Doc ID 10760 Rev 2
Figure 5. Peak reverse recovery current
versus dI
F
/dt (typical values, per
diode)
Figure 6. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 7. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
Figure 8. Reverse recovery softness factor
versus dI
F
/dt (typical values, per
diode)
Figure 9. Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dI
F
/dt (typical values, per
diode)
0
2
4
6
8
10
12
14
16
18
0 50 100 150 200 250 300 350 400 450 500
I (A)
RM
dI /dt(A/µs)
F
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350 400 450 500
t (ns)
rr
dI /dt(A/µs)
F
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
I =2 x I
F F(AV)
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
0 100 200 300 400 500
Q (nC)
rr
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
dI /dt(A/µs)
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 50 100 150 200 250 300 350 400 450 500
S factor
dI /dt(A/µs)
F
I < 2 x I
T =125°C
F F(AV)
j
V =400V
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125
I
RM
Q
RR
t
rr
S factor
T (°C)
j
I=I
Reference: T =125°C
F F(AV)
j
V =400V
R
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
0 50 100 150 200 250 300 350 400 450 500
V (V)
FP
dI /dt(A/µs)
F
I=I
T =125°C
F F(AV)
j
