NXP Semiconductors
BUK98150-55
N-channel TrenchMOS logic level FET
BUK98150-55 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 19 March 2014 6 / 11
4
6
2
8
10
I
D
(A)
0
V
DS
(V)
0 1084 62
003aaf209
V
GS
(V) = 3.6
3.4
3.8
10
5
4
2.8
3.2
3.0
2.6
2.4
2.2
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
200
300
400
R
DS(on)
(mΩ)
100
I
D
(A)
1 1195 73
003aaf210
V
GS
(V) = 3.0
3.2
3.6
4.0
5.0
3.4
T
j
= 25 °C
Fig. 7. Drain-source on-state resistance as a function
of drain current; typical values
4
6
2
8
10
I
D
(A)
0
V
GS
(V)
0 542 31
003aaf211
T
j
= 25 °CT
j
= 150 °C
V
DS
> I
D
x R
DSon
Fig. 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
4
5
3
6
7
g
fs
(S)
2
I
D
(A)
0 1084 62
003aaf212
V
DS
> I
D
x R
DSon
Fig. 9. Forward transconductance as a function of
drain current; typical values
003aaf213
T
mb
(°C)
- 100 2001000
0.5
2.0
1.5
1.0
2.5
a
I
D
= 5 A; V
GS
= 5 V
Fig. 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaf214
T
j
(°C)
- 100 2001000
0.5
2.0
1.5
1.0
2.5
V
GS(th)
(V)
maximum
typical
minimum
I
D
= 1 mA; V
DS
= V
GS
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
