1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 22.2 dB at 250 MHz increasing to 23.0 dB at 2150 MHz
Output power at 1 dB gain compression = 2 dBm
Supply current = 14.3 mA at a supply voltage of 3.3 V
Reverse isolation > 29 dB up to 2 GHz
Good linearity with low second order and third order products
Noise figure = 4 dB at 950 MHz
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
3. Ordering information
BGA2801
MMIC wideband amplifier
Rev. 5 — 13 July 2015 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN

V\P

Table 2. Ordering information
Type number Package
Name Description Version
BGA2801 - plastic surface-mounted package; 6 leads SOT363
BGA2801 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 2 of 18
NXP Semiconductors
BGA2801
MMIC wideband amplifier
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 3. Marking
Type number Marking code Description
BGA2801 *E8 * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.5 +5.0 V
I
CC
supply current - 55 mA
P
tot
total power dissipation T
sp
= 90 C-200mW
T
stg
storage temperature 40 +125 C
T
j
junction temperature - 125 C
P
drive
drive power - +10 dBm
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
sp
=90C 300 K/W
Table 6. Characteristics
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
30 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 3.0 3.3 3.6 V
I
CC
supply current 12.2 14.3 16.3 mA
G
p
power gain f = 250 MHz 21.6 22.2 22.8 dB
f = 950 MHz 21.7 22.4 23.1 dB
f = 2150 MHz 21.5 23.0 24.4 dB
RL
in
input return loss f = 250 MHz 15 17 19 dB
f = 950 MHz 151719dB
f = 2150 MHz 10 12 19 dB
RL
out
output return loss f = 250 MHz 13 17 22 dB
f = 950 MHz 141516dB
f = 2150 MHz 10 12 15 dB
BGA2801 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 3 of 18
NXP Semiconductors
BGA2801
MMIC wideband amplifier
8. Application information
Figure 1 shows a typical application circuit for the BGA2801 MMIC. The device is
internally matched to 50 , and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
ISL isolation f = 250 MHz 58 78 99 dB
f = 950 MHz 464749dB
f = 2150 MHz 29 32 34 dB
NF noise figure f = 250 MHz 3.4 3.8 4.3 dB
f = 950 MHz 3.4 3.8 4.3 dB
f = 2150 MHz 3.5 3.9 4.4 dB
B
3dB
3 dB bandwidth 3 dB below gain at 1 GHz 2.5 2.8 3.1 GHz
K Rollett stability factor f = 250 MHz 252 308 363
f = 950 MHz 7 8 10
f = 2150 MHz 0.7 1.3 1.9
P
L(sat)
saturated output power f = 250 MHz 4 4 5 dBm
f = 950 MHz 2 4 5 dBm
f = 2150 MHz 1 2 3 dBm
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz 1 2 3 dBm
f = 950 MHz 0 2 3 dBm
f = 2150 MHz 10 +1dBm
IP3
I
input third-order intercept point P
drive
= 34 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 10 8 6dBm
f
1
= 950 MHz; f
2
= 951 MHz 11 8 6dBm
f
1
=2150MHz; f
2
=2151MHz 17 14 10 dBm
IP3
O
output third-order intercept point P
drive
= 34 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 121416dBm
f
1
= 950 MHz; f
2
=951MHz 121416dBm
f
1
=2150MHz; f
2
= 2151 MHz 6 9 13 dBm
P
L(2H)
second harmonic output power P
drive
= 31 dBm
f
1H
= 250 MHz; f
2H
=500MHz 62 60 58 dBm
f
1H
= 950 MHz; f
2H
=1900MHz 51 50 48 dBm
IM2 second-order intermodulation distance P
drive
= 34 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 344556dBc
f
1
= 950 MHz; f
2
=951MHz 273950dBc
Table 6. Characteristics
…continued
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
30 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit

BGA2801,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 6CH MMIC Amp 3.8 dB 3.3V 14.3mA 2.8GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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