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BGA2801,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
BGA2801 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 10 of 18
NXP Semiconductors
BGA2801
MMIC wideband amplifier
Table 9. Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
i(1dB)
input power at 1 dB gain compression f = 250 MHz
V
CC
=3.0V 20 20 20 dBm
V
CC
=3.3V 20 19 19 dBm
V
CC
=3.6V 19 19 19 dBm
f = 950 MHz
V
CC
=3.0V 20 20 20 dBm
V
CC
=3.3V 20 20 20 dBm
V
CC
=3.6V 19 19 19 dBm
f = 2150 MHz
V
CC
=3.0V 22 22 22 dBm
V
CC
=3.3V 21 21 22 dBm
V
CC
=3.6V 21 21 22 dBm
Table 10. Output power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz
V
CC
=3.0V 1 1 0 dBm
V
CC
=3.3V 2 2 1 dBm
V
CC
=3.6V 3 3 2 dBm
f = 950 MHz
V
CC
=3.0V 1 0 0 dBm
V
CC
=3.3V 2 2 1 dBm
V
CC
=3.6V 3 3 2 dBm
f = 2150 MHz
V
CC
=3.0V 0 1 2dBm
V
CC
=3.3V 1 0 1dBm
V
CC
=3.6V 2 1 0 dBm
BGA2801 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 11 of 18
NXP Semiconductors
BGA2801
MMIC wideband amplifier
Table 11. Saturated output power over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(sat)
saturated output power f = 250 MHz
V
CC
=3.0V 333dBm
V
CC
=3.3V 444dBm
V
CC
=3.6V 555dBm
f = 950 MHz
V
CC
=3.0V 332dBm
V
CC
=3.3V 443dBm
V
CC
=3.6V 554dBm
f = 2150 MHz
V
CC
=3.0V 210dBm
V
CC
=3.3V 321dBm
V
CC
=3.6V 431dBm
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IM2 second-order intermodulation distance f
1
= 250 MHz;
f
2
= 251 MHz;
P
drive
= 36 dBm
V
CC
=3.0V 48 48 42 dBc
V
CC
=3.3V 52 45 41 dBc
V
CC
=3.6V 49 44 41 dBc
f
1
= 950 MHz;
f
2
= 951 MHz;
P
drive
= 36 dBm
V
CC
=3.0V 38 38 36 dBc
V
CC
=3.3V 40 39 37 dBc
V
CC
=3.6V 41 39 37 dBc
BGA2801 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 13 July 2015 12 of 18
NXP Semiconductors
BGA2801
MMIC wideband amplifier
Table 13. Output third-order intercept point over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IP3
O
output third-order intercept point f
1
=250MHz;
f
2
=251MHz;
P
drive
= 36 dBm
V
CC
=3.0V 13 13 12 dBm
V
CC
=3.3V 15 14 14 dBm
V
CC
=3.6V 16 15 14 dBm
f
1
=950MHz;
f
2
=951MHz;
P
drive
= 36 dBm
V
CC
=3.0V 13 12 12 dBm
V
CC
=3.3V 15 14 13 dBm
V
CC
=3.6V 16 15 14 dBm
f
1
=2150MHz;
f
2
=2151MHz;
P
drive
= 36 dBm
V
CC
=3.0V 9 8 7 dBm
V
CC
=3.3V 11 9 8 dBm
V
CC
=3.6V 12 10 8 dBm
Table 14. 3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
B
3dB
3 dB bandwidth V
CC
= 3.0 V 2.875 2.832 2.745 GHz
V
CC
= 3.3 V 2.902 2.849 2.763 GHz
V
CC
= 3.6 V 2.920 2.866 2.775 GHz
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BGA2801,115

Mfr. #:
Buy BGA2801,115
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 6CH MMIC Amp 3.8 dB 3.3V 14.3mA 2.8GHz
Lifecycle:
New from this manufacturer.
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