AT-32033-TR1G Datasheet AT-32033-TR1G, AT-32011-TR1G, AT-32033-BLKG | P1-P3

AT-32011, AT-32033

Low Current, High Performance NPN

Silicon Bipolar Transistor

Data Sheet

Description

Avago’s AT-32011 and AT-32033 are high performance

NPN bipolar transistors that have been optimized for

maximum f

at low voltage operation, making them ideal

for use in battery powered applications in wireless mar-

kets. The AT-32033 uses the 3 lead SOT-23, while the AT-

32011 places the same die in the higher performance 4

lead SOT-143. Both packages are industry standard, and

compatible with high volume surface mount assembly

techniques.

The 3.2 micron emitter-to-emitter pitch and reduced

parasitic design of these transistors yields extremely high

performance products that can perform a multiplicity

of tasks. The 20 emitter nger interdigitated geometry

yields an easy to match to and extremely fast transistor

with moderate power, low noise resistance, and low op-

erating currents.

Optimized performance at 2.7 V makes these devices

ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery

operated systems as an LNA, gain stage, buer, oscilla-

tor, or active mixer. Typical amplier designs at 900 MHz

yield 1.2 dB noise gures with 12 dB or more associated

gain at a 2.7 V, 2 mA bias, with noise performance being

relatively insensitive to input match. High gain capabil-

ity at 1 V, 1 mA makes these devices a good t for 900

MHz pager applications. Voltage breakdowns are high

enough for use at 5 volts.

The AT-3 series bipolar transistors are fabricated using

an optimized version of Avago’s 10 GHz f

, 30 GHz f

MAX

Self-Aligned-Transistor (SAT) process. The die are nitride

passivated for surface protection. Excellent device uni-

formity, performance and reliability are produced by the

use of ion-implantation, self-alignment techniques, and

gold metalization in the fabrication of these devices.

Features

• High Performance Bipolar Transistor Optimized for

Low Current, Low Voltage Operation

• 900 MHz Performance:

AT-32011: 1 dB NF, 14 dB G

AT-32033: 1 dB NF, 12.5 dB G

• Characterized for End-Of-Life Battery Use (2.7 V)

• SOT-23 and SOT-143 SMT Plastic Packages

• Tape-And-Reel Packaging Option Available

• Lead-free

Pin Connections and Package Marking

Notes:

Top View. Package Marking provides orientation and identication.

"x" is the date code.

BASE EMITTER

EMITTER COLLECTOR

BASE EMITTER

COLLECTOR

320x

SOT-23 (AT-32033)

SOT-143 (AT-32011)

Note:

Top view. Package marking provides orientation

and identification. "x" is the date code.

AT-32011, AT-32033 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

[1]

EBO

Emitter-Base Voltage V 1.5

CBO

Collector-Base Voltage V 11

CEO

Collector-Emitter Voltage V 5.5

Collector Current mA 32

Power Dissipation

[2, 3]

mW 200

Junction Temperature °C 150

STG

Storage Temperature °C -65 to 150

Electrical Specications, T

= 25°C

AT-32011 AT-32033

Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.

NF Noise Figure

= 2.7 V, I

= 2 mA f = 0.9 GHz dB 1.0

[1]

1.3

[1]

1.0

[2]

1.3

[2]

Associated Gain

= 2.7 V, I

= 2 mA f = 0.9 GHz dB 12.5

[1]

[2]

12.5

[2]

Forward Current Transfer Ratio

= 2.7 V, I

= 2 mA – 70 300 70 300

CBO

Collector Cuto Current

= 3 V µA 0.2 0.2

EBO

Emitter Cuto Current

= 1 V µA 1.5 1.5

Notes:

1. Test circuit A, Figure 1. Numbers reect device performance de-embedded from circuit losses. Input loss = 0.3 dB;

output loss = 0.3 dB.

2. Test circuit B, Figure 1. Numbers reect device performance de-embedded from circuit losses. Input loss = 0.3 dB;

output loss = 0.3 dB.

Thermal Resistance

[2]

= 550 °C/W

Notes:

1. Operation of this device above any one

of these parameters may cause permanent

damage.

2. T

Mounting Surface

= 25°C.

3. Derate at 1.82 mW/°C for T

> 40°C.

AT-32011 fig 1

1000 pF

W = 10 L = 1870

W = 10

CKT A: L = 380

CKT B: L = 380

W = 30

L = 60

W = 10 L = 1870

1000 pF

W = 10

CKT A: L = 105

CKT B: L = 850

CKT A: W = 30 L = 50 x 2

CKT B: W = 30 L = 60

TEST CIRCUIT

BOARD MATL = 0.062" FR-4 (ε = 4.8)

RF IN

W = 30

L = 60

CKT A: 25 Ω

CKT B: 5 Ω

RF OUT

NOT TO SCALE

DIMENSIONS IN MILS

Figure 1. Test Circuit for Noise Figure and Associated Gain.

This circuit is a compromise match between best noise gure, best gain, stability, and a practical synthesizable match.

Characterization Information, T

= 25°C

AT-32011 AT-32033

Symbol Parameters and Test Conditions Units Typ. Typ.

1dB

Power at 1 dB Gain Compression (opt tuning)

= 2.7 V, I

= 20 mA f = 0.9 GHz dBm 13 13

1dB

Gain at 1 dB Gain Compression (opt tuning)

= 2.7 V, I

= 20 mA f = 0.9 GHz dB 16.5 15

Output Third Order Intercept Point (opt tuning)

= 2.7 V, I

= 20 mA f = 0.9 GHz dBm 24 24

Gain in 50 Ω System

= 2.7 V, I

= 2 mA f = 0.9 GHz dB 13 11.5

AT-32011 fig 2

NOISE FIGURE (dB)

FREQUENCY (GHz)

1 1.5

0.5

0.5 2.5

1.5

1 mA

2 mA

5 mA

10 mA

20 mA

AT-32011 fig 3

Ga (dB)

FREQUENCY (GHz)

1.0 1.5

0.5 2.5

2.0

1 mA

2 mA

5 mA

10 mA

20 mA

AT-32011 fig 4

Ga (dB)

FREQUENCY (GHz)

1.0 1.5

0.5 2.5

2.0

1 mA

2 mA

5 mA

10 mA

20 mA

Figure 4. AT-32033 Associated Gain at Optimum Noise

Match vs. Frequency and Current at V

= 2.7 V.

Figure 2. AT-32011 and AT-32033 Minimum Noise Fig-

ure vs. Frequency and Current at V

= 2.7 V.

Figure 3. AT-32011 Associated Gain at Optimum Noise

Match vs. Frequency and Current at V

= 2.7 V.

Figure 6. AT-32011 1 dB Compressed Gain vs. Frequen-

cy and Current at V

= 2.7 V.

Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain

Compression vs. Frequency and Current at V

= 2.7 V.

Figure 7. AT-32033 1 dB Compressed Gain vs. Frequen-

cy and Current at V

= 2.7 V.

AT-32011 fig 5

P 1dB (dBm)

-5

FREQUENCY (GHz)

1.0 1.5

0.5 2.5

2.0

2 mA

5 mA

10 mA

20 mA

AT-32011 fig 6

G 1dB (dB)

FREQUENCY (GHz)

1.0 1.5

0.5 2.5

2.0

2 mA

5 mA

10 mA

20 mA

AT-32011 fig 7

G 1dB (dB)

FREQUENCY (GHz)

1.0 1.5

0.5 2.5

2.0

2 mA

5 mA

10 mA

20 mA

P1-P3 P4-P6 P7-P9 P10-P10

AT-32033-TR1G

Mfr. #:

Buy AT-32033-TR1G

Manufacturer:

Broadcom / Avago

Description:

RF Bipolar Transistors Transistor Si Low Current

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AT-32033-TR1G

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