LTC4215/LTC4215-2
16
4215fe
APPLICATIONS INFORMATION
and C2 are cleared by removal of the fault condition, the
switch is allowed to turn on again.
The LTC4215 will set bit D2 and turn off in the event of
an overcurrent fault, preventing it from remaining in an
overcurrent condition. If confi gured to auto-retry, the
LTC4215 will continually attempt to restart after cool-down
cycles until it succeeds in starting up without generating
an overcurrent fault.
Data Converter
The LTC4215 incorporates an 8-bit ∆∑ A/D converter
that continuously monitors three different voltages. The
∆∑ architecture inherently averages signal noise during
the measurement period. The SOURCE pin has a 1/12.5
resistive divider to monitor a full scale voltage of 15.4V
with 60mV resolution. The ADIN pin is monitored with a
1.235V full scale and 4.82mV resolution, and the voltage
between the V
DD
and SENSE pins is monitored with a
38.6mV full scale and 151µV resolution.
Results from each conversion are stored in registers E
(Sense), F (Source) and G (ADIN), as seen in Tables 6-8,
and are updated 10 times per second. Setting CONTROL
register bit A5 invokes a test mode that halts the data
converter so that registers E, F, and G may be written to
and read from for software testing.
Confi guring the GPIO Pin
Table 2 describes the possible states of the GPIO pin using
the control register bits A6 and A7. At power-up, the default
state is for the GPIO pin to go high impedance when power
is good (FB pin greater than 1.235V). Other applications
for the GPIO pin are to pull down when power is good, a
general purpose output and a general purpose input.
Current Limit Stability
For many applications the LTC4215 current limit will be
stable without additional components. However there are
certain conditions where additional components may be
needed to improve stability. The dominant pole of the cur-
rent limit circuit is set by the capacitance and resistance at
the gate of the external MOSFET, and larger gate capaci-
tance makes the current limit loop more stable. Usually
a total of 8nF gate to source capacitance is suffi cient for
stability and is typically provided by inherent MOSFET C
GS
,
however the stability of the loop is degraded by increasing
R
SENSE
or by reducing the size of the resistor on a gate RC
network if one is used, which may require additional gate
to source capacitance. Board level short-circuit testing
in highly recommended as board layout can also affect
transient performance, for stability testing the worst case
condition for current limit stability occurs when the output
is shorted to ground after a normal startup.
There are two possible parasitic oscillations when the
MOSFET operates as a source follower when ramping
at power-up or during current limiting. The fi rst type of
oscillation occurs at high frequencies, typically above
1MHz. This high frequency oscillation is easily damped
with R5 as shown in Figure 1. In some applications, one
may fi nd that R5 helps in short-circuit transient recovery
as well. However, too large of an R5 value will slow down
the turn-off time. The recommended R5 range is between
5 and 500.
The second type of source follower oscillation occurs at
frequencies between 200kHz and 800kHz due to the load
capacitance being between 0.2µF and 9µF, the presence
of R5 resistance, the absence of a drain bypass capacitor,
a combination of bus wiring inductance and bus supply
output impedance. To prevent this second type of oscillation
avoid load capacitance below 10µF, alternately connect an
external capacitor from the MOSFET gate to ground with
a value greater than 1.5µF.
Supply Transients
The LTC4215 is designed to ride through supply transients
caused by load steps. If there is a shorted load and the
parasitic inductance back to the supply is greater than
0.5µH, there is a chance that the supply collapses before
the active current limit circuit brings down the GATE pin.
If this occurs, the undervoltage monitors pull the GATE
LTC4215/LTC4215-2
17
4215fe
APPLICATIONS INFORMATION
pin low. The undervoltage lockout circuit has a 2µs fi lter
time after V
DD
drops below 2.74V. The UV pin reacts in
2µs to shut the GATE off, but it is recommended to add a
lter capacitor C
F
to prevent unwanted shutdown caused
by a transient. Eventually either the UV pin or undervoltage
lockout responds to bring the current under control before
the supply completely collapses.
Supply Transient Protection
The LTC4215 is safe from damage with supply voltages up
to 24V. However, spikes above 24V may damage the part.
During a short-circuit condition, large changes in current
owing through power supply traces may cause inductive
voltage spikes which exceed 24V. To minimize such spikes,
the power trace inductance should be minimized by using
wider traces or heavier trace plating. Also, a snubber circuit
dampens inductive voltage spikes. Build a snubber by using
a 100Ω resistor in series with a 0.1µF capacitor between
V
DD
and GND. A surge suppressor, Z1 in Figure 1, at the
input can also prevent damage from voltage surges.
Design Example
As a design example, take the following specifi cations:
V
IN
= 12V, I
MAX
= 5A, I
INRUSH
= 1A, dI/dt
INRUSH
= 10A/ms,
C
L
= 330µF, V
UV(ON)
= 10.75V, V
OV(OFF)
= 14.0V, V
PWRGD(UP)
= 11.6V, and I
2
C ADDRESS = 1010011. This completed
design is shown in Figure 1.
Selection of the sense resistor, R
S
, is set by the overcurrent
threshold of 25mV:
R
mV
I
S
MAX
==
25
0 005. Ω
The MOSFET is sized to handle the power dissipation dur-
ing inrush when output capacitor C
OUT
is being charged.
A method to determine power dissipation during inrush
is based on the principle that:
Energy in CL = Energy in Q1
This uses:
Energy in C
L
==
()()
1
2
1
2
033 12
2
2
CV mF.
or 0.024 joules. Calculate the time it takes to charge up
C
OUT
:
tC
V
I
mF
V
A
ms
STARTUP L
DD
INRUSH
== =•.033
12
1
4
The power dissipated in the MOSFET:
P
t
W
DISS
STARTUP
==
Energyin C
L
6
The SOA (safe operating area) curves of candidate MOSFETs
must be evaluated to ensure that the heat capacity of the
package tolerates 6W for 4ms. The SOA curves of the
Fairchild FDC653N provide for 2A at 12V (24W) for 10ms,
satisfying this requirement. Since the FDC653N has less
than 8µF of gate capacitance and we are using a GATE
RC network, the short circuit stability of the current limit
should be checked and improved by adding a capacitor
from GATE to SOURCE if needed.
The inrush current is set to 1A using C1:
CC
I
I
CmF
μA
A
or C
L
GATE
INRUSH
1
1033
20
1
16
=
==
.•.88nF
The inrush dI/dt is set to 10A/ms using C
SS
:
C
I
dI dt
A
s
R
μA
SS
SS
SENSE
=
=
/
•. 0 0375
1
10
100
000
0 0375
1
5
75•. .
m
nF
Ω
=
LTC4215/LTC4215-2
18
4215fe
APPLICATIONS INFORMATION
For a start-up time of 4ms with a 2x safety margin we
choose:
C
t
ms μF
C
C
ms
TIMER
STARTUP
SS
TIMER
=+
=
2
12 3
10
8
./
112 3
75 10 068
./
.• .
ms μF
nF μF+≅
Note the minimum value of C
TIMER
is 10nF, and each 1nF
of soft-start capacitance needs 10nF of TIMER capaci-
tance/time during start-up.
The UV and OV resistor string values can be solved in the
following method. First pick R3 based on I
STRING
being
1.235V/R3 at the edge of the OV rising threshold, where
I
STRING
> 40µA. Then solve the following equations:
R2 =
V
V
•R3
UV
OV
OV(OFF)
UV(ON)
TH(RISING)
T
HH(FALLING)
UV(ON)
TH(RI
–R3
R1 =
V
UV
•( )RR32+
SSING)
––RR32
In our case we choose R3 to be 3.4k to give a resistor
string current below 100µA. Then solving the equations
results in R2 = 1.16k and R1 = 34.6k.
The FB divider is solved by picking R8 and solving for R7,
choosing 3.57k for R8 we get:
R7 =
V
FB
PWRGD(UP)
TH(RISING)
R
R
8
8
resulting in R7 = 30k.
A 0.1µF capacitor, C
F
, is placed on the UV pin to prevent
supply glitches from turning off the GATE via UV or OV.
The address is set with the help of Table 1, which indi-
cates binary address 1010011 corresponds to address
19. Address 19 is set by setting ADR2 high, ADR1 open
and ADR0 high.
Next the value of R5 and R6 are chosen to be the default
values 10Ω and 15k as discussed previously.
UV
OV
SS
GND
ON
EN
SDAO
FB
GPIO
INTV
CC
TIMER
ADIN
ADR2
ADR1
V
DD
SENSE
+
SENSE
GATE
SOURCE
SDAI
SCL
ALERT
NC
ADR0
R2
R3
C
F
Z1
R1
SENSE RESISTOR R
S
C3
LTC4215UFD
R8
I
LOAD
4215 F05
I
LOAD
Figure 5. Recommended Layout
In addition a 0.1µF ceramic bypass capacitor is placed on
the INTV
CC
pin.
Layout Considerations
To achieve accurate current sensing, a Kelvin connection
is required. The minimum trace width for 1oz copper
foil is 0.02" per amp to make sure the trace stays at a
reasonable temperature. Using 0.03" per amp or wider
is recommended. Note that 1oz copper exhibits a sheet
resistance of about 530µΩ/
®. Small resistances add up
quickly in high current applications. To improve noise
immunity, put the resistive dividers to the UV, OV and FB
pins close to the device and keep traces to V
DD
and GND
short. It is also important to put the bypass capacitor for
the INTV
CC
pin, C3, as close as possible between INTV
CC
and GND. A 0.1µF capacitor from the UV pin (and OV pin
through resistor R2) to GND also helps reject supply noise.
Figure 4 shows a layout that addresses these issues. Note
that a surge suppressor, Z1, is placed between supply and
ground using wide traces.

LTC4215CUFD#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Hot Swap Voltage Controllers Hot Swap Contr. w/ADC and I2C
Lifecycle:
New from this manufacturer.
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