June 2008 Rev 2 1/16
16
STD2NK100Z
STP2NK100Z - STU2NK100Z
N-channel 1000 V, 6.25 , 1.85 A, TO-220, DPAK, IPAK
Zener-protected SuperMESH™ Power MOSFET
Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Application
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Figure 1. Internal schematic diagram
Type
V
DSS
R
DS(on)
max
I
D
P
TOT
STD2NK100Z 1000 V < 8.5 1.85 A 70 W
STP2NK100Z 1000 V < 8.5 1.85 A 70 W
STU2NK100Z 1000 V < 8.5 1.85 A 70 W
1
2
3
TO-220
DPAK
1
3
IPAK
3
2
1
Table 1. Device summary
Order codes Marking Package Packaging
STD2NK100Z 2NK100Z DPAK Tape and reel
STP2NK100Z 2NK100Z TO-220 Tube
STU2NK100Z 2NK100Z IPAK Tube
www.st.com
Contents STD2NK100Z - STP2NK100Z - STU2NK100Z
2/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD2NK100Z - STP2NK100Z - STU2NK100Z Electrical ratings
3/16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0)
1000 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25 °C
1.85 A
I
D
Drain current (continuous) at T
C
= 100 °C
1.16 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 7.4 A
P
TOT
Total dissipation at T
C
= 25 °C
70 W
Derating factor 0.56 W/°C
V
ESD(G-S)
G-S ESD (HBM C=100 pF, R=1.5 k) 3000 V
dv/dt
(2)
2. I
SD
1.85 A, di/dt 200 A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 2.5 V/ns
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 IPAK DPAK
R
thj-case
Thermal resistance junction-case max 1.79 °C/W
R
thj-pcb
Thermal resistance junction-pcb minimum footprint -- -- 50 °C/W
R
thj-amb
Thermal resistance junction-amb max 62.5 100 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C
Table 4. Avalanche data
Symbol Parameter Value Unit
I
AR
(1)
1. Pulse width limited by Tjmax
Avalanche current, repetitive or not-repetitive 1.85 A
E
AS
(2)
2. Starting Tj = 25°C, I
D
= I
AR
, V
DD
= 50V
Single pulse avalanche energy 170 mJ

STD2NK100Z

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Channel 1000V Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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