STD2NK100Z - STP2NK100Z - STU2NK100Z Electrical characteristics
7/16
Figure 8. Normalized B
VDSS
vs temperature Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Electrical characteristics STD2NK100Z - STP2NK100Z - STU2NK100Z
8/16
Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
temperature
T
J
(°C)1401301201101009080706050403020100
E
AS(
mJ)
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
AM00056v1
ID
=1.85A
STD2NK100Z - STP2NK100Z - STU2NK100Z Test circuits
9/16
3 Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test
circuit
Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

STD2NK100Z

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Channel 1000V Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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