7
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ATA6025
6. Thermal Resistance
Parameters Symbol Value Unit
Thermal resistance from junction to ambient R
thJA
160 K/W
7. Electrical Characteristics
V
VB
= 7.2V to 17.5V, RKL15 = 50 kΩ 1%, RSET = 22 kΩ 1%, T
amb
= –40 to 125°C, unless otherwise specified
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
0 Current Consumption and ESD Clamping
0.1
Current consumption in
normal mode
V
VKL15
> 4.5V
V
VB
=17.5V
NOTL = high
I
NOTL
= –2.5 mA
2I
VB
10 mA A
0.2
Current consumption in
standby mode
Standby:
V
VKL15
< 1.8V
V
VB
= 17.5V
NOTL = low
2I
VBstby
100 µA A
0.3
Negative ESD clamping
pin VB
to GND, I
VB
= –10 mA 2 VN
VB
–1.4 –0.3 V A
0.4
Positive ESD clamping
pin RREF
to GND, I
RREF
= 5 mA 4 VP
RREF
48VA
0.5
Positive ESD clamping
pin CLK
to GND, I
CLK
= 20 mA 7 VP
CLK
610VA
0.6
Positive ESD clamping
pin VB
to GND, I
VB
= 5 mA 2 VP
VB
41 65 V A
0.7
Positive ESD clamping
pin VKL15
to GND, I
VKL15
= 1.6 mA 5 VP
VKL15
41 65 V A
0.8
Positive ESD clamping
pin NOTL
to GND, I
NOTL
= 20 mA 1 VP
NOTL
31 55 V A
0.9
Positive ESD clamping
pin WD
to GND, I
WD
= 0.7 mA 6 VP
WD
35 55 V A
0.10
Positive ESD clamping
pin VCC
to GND, I
VCC
= 0.5 mA 8 VP
VCC
35 55 V A
1 Reference Voltage
1.1 Voltage at RREF 4 V
RREF
1.14 1.22 1.3 V A
1.2
Possible values of
resistor RREF
4R
RREF
10 22 50 kΩ A
2 Oscillator
2.1 Oscillator frequency
RSET = 22 kW ±1%
at pin CLK with
pull-up-resistor to +5 V
7f
CLK
91011kHzA
2.2
Oscillator frequency is
variable in a range
RSE =
10 kΩ to 50 kΩ ±1%
7f
CLK
3.96 24.2 kHz A
4 VB Monitoring
4.1 High level threshold 2 V
VBhi
5.94 7.26 V A
4.2 Low level threshold 2 V
VBlo
5.76 7.04 V A
4.3 Hysteresis 2 V
VBhys
0.2 V A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
8
4716C–AUTO–09/05
ATA6025
5 VKL15 Monitoring
5.1 Input resistor at VKL15 5 Ri
KL15
18 70 kΩ A
5.2 Low voltage threshold RKL15 = 50 kΩ ±1% 5 VKL15
lo
1.8 V A
5.3 High voltage threshold RKL15 = 50 kΩ ±1% 5 VKL15
hi
4.5 V A
5.4 Hysteresis 5 VKL15
hys
0.2 1 V A
6 VCC Monitoring
6.1
Pull-down resistor to
GND at pin VCC
V
VB
= 17.5V
V
VKL15
= 0V or
V
VKL15
= V
VB
V
VCC
= 5V
8Rpd
VCC
50 350 kΩ A
6.2
Undervoltage detection
low level
8VCCI
on
4VA
6.3
Undervoltage detection
high level
8VCCI
off
4.8 V A
6.4
Overvoltage detection
high level
8VCCI
off
6.3 V A
6.5
Overvoltage detection
low level
8VCCh
off
5.2 V A
6.6
Hysteresis of under-
and overvoltage
detection
8VCC
hys
0.2 V A
9 Oscillator Test
9.1 Pull-down-resistor
CLK = high,
V
CLK
= 0V to 4.5V
7Rpd
CLK
615kΩ A
9.2 Saturation voltage
I
CLK
= 1.6 mA,
CLK = low
7Vs
CLK
0.4 V A
9.3 Short current V
CLK
= 5V, CLK = low 7 Isc
CLK
10 mA A
10 Push-pull Output NOTL
10.1
Saturation voltage
NOTL switched off
I
NOTL
= 1.8 mA
NOTL off
1 Vsat
NOTLoff
1VA
10.2
Short current NOTL if
switched off
V
NOTL
= V
VB
NOTL off
1Isc
NOTLoff
15 mA A
10.3
Maximum output
voltage NOTL
17.5V < V
VB
< 30V
I
NOTL
= –2.5 mA
NOTL on
1V
NOTLmax
17.5 22 V A
10.4
Saturation voltage
NOTL switched on;
guaranteed down to VB
low level threshold
Vsat
NOTLon
= V
VB
– V
NOTL
V
VKL15
= V
VB
I
NOTL
= –2.5 mA
NOTL on
1 Vsat
NOTLon
0.25 V A
10.5
Short current NOTL if
switched off
V
NOTL
= 0 V
NOTL = on
1Isc
NOTLon
–50 mA A
10.7
Time delay of internal
up and down counter
1t
Delay
360 400 450 ms A
7. Electrical Characteristics (Continued)
V
VB
= 7.2V to 17.5V, RKL15 = 50 kΩ 1%, RSET = 22 kΩ 1%, T
amb
= –40 to 125°C, unless otherwise specified
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
9
4716C–AUTO–09/05
ATA6025
10.8
Rise time at pin NOTL
switch on
C
NOTL
200 pF
V
NOTL
from low = 10% to
high = 90% V
VB
1tr
NOTL
sA
10.9
Fall time at pin NOTL
switch off
C
NOTL
200 pF
V
NOTL
from high = 90%
to low = 10% V(VB)
1tf
NOTL
sA
11 Watchdog
11.1 Pull-down-resistor V
VB
= V
KL15
= 17.5V 6 Rpd
WD
30 200 kΩ A
11.2 Voltage threshold low 6 Vlow
WD
1VA
11.3 Voltage threshold high 6 Vhigh
WD
3.5 V A
11.4 Hysteresis
Vhys
WD
=
Vhigh
WD
Vlow
WD
6Vhys
WD
0.5 V A
11.5
Acceptable low WD
pulse width for failure
Pulse = high or low
RSET = 22 kΩ ±1%
6Tu
WD
2.6 3 3.3 ms A
11.6
Acceptable high WD
pulse width for failure
Pulse = high or low
RSET = 22 kΩ ±1%
6To
WD
7.1 8 8.9 ms A
7. Electrical Characteristics (Continued)
V
VB
= 7.2V to 17.5V, RKL15 = 50 kΩ 1%, RSET = 22 kΩ 1%, T
amb
= –40 to 125°C, unless otherwise specified
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

ATA6025-TAQ

Mfr. #:
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Description:
IC MON WATCHDOG/BATT/5V 8-SOIC
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