PSMN6R5-25YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 31 October 2011 6 of 15
NXP Semiconductors
PSMN6R5-25YLC
N-channel 25 V 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 µA; V
GS
=0V; T
j
=25°C 25--V
I
D
= 250 µA; V
GS
=0V; T
j
= -55 °C 22.5 - - V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
1.05 1.54 1.95 V
I
D
=10mA; V
DS
=V
GS
; T
j
= 150 °C 0.5 - - V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C --2.25V
I
DSS
drain leakage current V
DS
=25V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=25V; V
GS
=0V; T
j
= 150 °C - - 100 µA
I
GSS
gate leakage current V
GS
=16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=-16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=20A; T
j
=25°C;
see Figure 12
-7.38.5mΩ
V
GS
=4.5V; I
D
=20A; T
j
=150°C;
see Figure 13; see Figure 12
- - 13.6 mΩ
V
GS
=10V; I
D
=20A; T
j
=25°C;
see Figure 12
-5.56.5mΩ
V
GS
=10V; I
D
=20A; T
j
= 150 °C;
see Figure 13; see Figure 12
- - 10.3 mΩ
R
G
internal gate resistance (AC) f = 1 MHz - 2.2 4.4 Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=20A; V
DS
=12V; V
GS
= 10 V; see
Figure 14
; see Figure 15
- 17.5 - nC
I
D
=20A; V
DS
=12V; V
GS
=4.5V;
see Figure 14
; see Figure 15
-8.4-nC
I
D
=0A; V
DS
=0V; V
GS
=10V - 16 - nC
Q
GS
gate-source charge I
D
=20A; V
DS
=12V; V
GS
=4.5V;
see Figure 14
; see Figure 15
-2.6-nC
Q
GS(th)
pre-threshold gate-source
charge
-1.7-nC
Q
GS(th-pl)
post-threshold gate-source
charge
-0.9-nC
Q
GD
gate-drain charge - 2.8 - nC
V
GS(pl)
gate-source plateau voltage I
D
=20A; V
DS
=12V; see Figure 14;
see Figure 15
-2.71-V
C
iss
input capacitance V
DS
=12V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 16
- 1093 - pF
C
oss
output capacitance - 282 - pF
C
rss
reverse transfer capacitance - 106 - pF
t
d(on)
turn-on delay time V
DS
=12V; R
L
=0.6Ω; V
GS
=4.5V;
R
G(ext)
=4.7Ω
-15-ns
t
r
rise time -8.6-ns
t
d(off)
turn-off delay time - 19 - ns
t
f
fall time - 5.7 - ns
