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IRF4104GPBF

P1-P3P4-P6P7-P9
01/18/11
www.irf.com 1
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 5.5mΩ
I
D
= 75A
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
Features
IRF4104GPbF
TO-220AB
IRF4104GPbF
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Packa
g
e limited)
I
DM
P
u
l
se
d D
ra
i
n
C
urren
t
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Volta
g
e V
E
AS (Thermally limited)
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
E
AS
(Tested )
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy T
es
t
e
d V
a
l
ue
I
AR
A
va
l
anc
h
e
C
urren
t
A
E
AR
R
epe
titi
ve
A
va
l
anc
h
e
E
ner
gy
mJ
T
J
Operatin
g
Junction and
T
STG
Stora
e Temperature Ran
e
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 1.05
R
θCS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
θJA
Junction-to-Ambient
––– 62
A
mJ
°C
°C/W
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
140
0.95
± 20
Max.
120
84
470
75
220
120
See Fig.12a, 12b, 15, 16
PD - 96350
IRF4104GPbF
2 www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.3 5.5
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 63 ––– ––– V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 68 100
Q
gs
Gate-to-Source Charge ––– 21 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 27 –––
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time ––– 130 –––
t
d(off)
Turn-Off Delay Time ––– 38 ––– ns
t
f
Fall Time ––– 77 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 3000 –––
C
oss
Output Capacitance ––– 660 –––
C
rss
Reverse Transfer Capacitance ––– 380 ––– pF
C
oss
Output Capacitance ––– 2160 –––
C
oss
Output Capacitance ––– 560 –––
C
oss
eff.
Effective Output Capacitance ––– 850 –––
Source-Drain Ratin
g
s and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 75
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 470
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 23 35 ns
Q
rr
Reverse Recovery Charge ––– 6.8 10 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= 10V, I
D
= 75A
I
D
= 75A
V
DS
= 32V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 20V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 75A
R
G
= 6.8
Ω
IRF4104GPbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 25°C
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20µs PULSE WIDTH
Tj = 175°C
V
GS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4 6 8 10 12
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 15V
20µs PULSE WIDTH
0 20406080100
I
D,
Drain-to-Source Current (A)
0
20
40
60
80
100
120
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 10V
380µs PULSE WIDTH
P1-P3P4-P6P7-P9

IRF4104GPBF

Mfr. #:
Buy IRF4104GPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 40V HALOGEN-FREE 1 N-CH HEXFET
Lifecycle:
New from this manufacturer.
Delivery:
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