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IRF4104GPBF
P1-P3
P4-P6
P7-P9
IRF4104GPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-t
o-Sour
ce Vol
tage (V
)
0
1000
2000
3000
4000
5000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
2
04
06
08
0
1
0
0
Q
G
Tot
al Gat
e Char
ge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
VDS= 20
V
I
D
= 75A
0.2
0.6
1.0
1.4
1.8
V
SD
, S
ource-toD
rain V
oltage (
V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
0
1
10
100
1000
V
DS
, D
rai
n-toS
ource V
oltage (
V)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°
C
Si
ngle Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
IRF4104GPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion Temper
ature (
°C
)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 75A
V
GS
= 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangul
ar Pul
se Durati
on (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty
Fac
tor D
= t1/t2
2. P
eak Tj =
P dm x Zt
hjc + T
c
25
50
75
100
125
150
175
T
C
, C
ase Tem
perat
ure (°C
)
0
20
40
60
80
100
120
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIM
ITED BY PACKAGE
Ri (°C/W)
τ
i (sec)
0.371 0.000272
0.337 0.001375
0.337 0.018713
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
IRF4104GPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
T
y
pe
as
D.U.T
.
Current
Sampling
Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.
T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emperatur
e ( °C )
1.0
2.0
3.0
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion Temper
ature (
°C
)
0
100
200
300
400
500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 11A
16A
BOTTOM 75A
P1-P3
P4-P6
P7-P9
IRF4104GPBF
Mfr. #:
Buy IRF4104GPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 40V HALOGEN-FREE 1 N-CH HEXFET
Lifecycle:
New from this manufacturer.
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IRF4104GPBF