ADG5204
Rev. 0 | Page 3 of 20
SPECIFICATIONS
±15 V DUAL SUPPLY
V
DD
= 15 V ± 10%, V
SS
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
DD
to V
SS
V max
On Resistance, R
ON
160 Ω typ V
S
= ±10 V, I
S
= −1 mA, see Figure 24
200 250 280 Ω max V
DD
= +13.5 V, V
SS
= −13.5 V
On-Resistance Match
Between Channels, ∆R
ON
4.5 Ω typ V
S
= ±10 V, I
S
= −1 mA
8 9 10 Ω max
On-Resistance Flatness, R
FLAT(ON)
38 Ω typ V
S
= ±10 V, I
S
= −1 mA
50 65 70 Ω max
LEAKAGE CURRENTS V
DD
= +16.5 V, V
SS
= −16.5 V
Source Off Leakage, I
S
(Off) 0.01 nA typ
V
S
= V
S
= ±10 V, V
D
= 10 V, see Figure 23
0.1 0.2 0.4 nA max
Drain Off Leakage, I
D
(Off) 0.01 nA typ
V
S
= V
S
= ±10 V, V
D
= 10 V, see Figure 23
0.1 0.4 1.2 nA max
Channel On Leakage, I
D
, I
S
(On) 0.02 nA typ V
S
= V
D
= ±10 V, see Figure 26
0.2 0.5 1.2 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
175 ns typ R
L
= 300 Ω, C
L
= 35 pF
230 285 320 ns max V
S
= 10 V, see Figure 29
t
ON
(EN) 155 ns typ R
L
= 300 Ω, C
L
= 35 pF
205 255 285 ns max V
S
= 10 V, see Figure 31
t
OFF
(EN) 150 ns typ R
L
= 300 Ω, C
L
= 35 pF
175 200 215 ns max V
S
= 10 V, see Figure 31
Break-Before-Make Time Delay, t
D
80 ns typ R
L
= 300 Ω, C
L
= 35 pF
30 ns min V
S1
= V
S2
= 10 V, see Figure 30
Charge Injection, Q
INJ
−0.6 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF, see Figure 32
Off Isolation −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz, see Figure 25
Channel-to-Channel Crosstalk −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 28
−3 dB Bandwidth 136 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 27
Insertion Loss −6.8 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 27
C
S
(Off) 3 pF typ V
S
= 0 V, f = 1 MHz
C
D
(Off) 26 pF typ V
S
= 0 V, f = 1 MHz
C
D
, C
S
(On) 30 pF typ V
S
= 0 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= +16.5 V, V
SS
= −16.5 V
I
DD
45 μA typ Digital inputs = 0 V or V
DD
55 70 μA max
I
SS
0.001 μA typ Digital inputs = 0 V or V
DD
1 μA max
V
DD
/V
SS
±9/±22 V min/max GND = 0 V
1
Guaranteed by design; not subject to production test.
ADG5204
Rev. 0 | Page 4 of 20
±20 V DUAL SUPPLY
V
DD
= +20 V ± 10%, V
SS
= −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
DD
to V
SS
V max
On Resistance, R
ON
140 Ω typ V
S
= ±15 V, I
S
= −1 mA, see Figure 24
160 200 230 Ω max V
DD
= +18 V, V
SS
= −18 V
On-Resistance Match
Between Channels, ∆R
ON
4.5 Ω typ V
S
= ±15 V, I
S
= −1 mA
8 9 10 Ω max
On-Resistance Flatness, R
FLAT(ON)
33 Ω typ V
S
= ±15 V, I
S
= −1 mA
45 55 60 Ω max
LEAKAGE CURRENTS V
DD
= +22 V, V
SS
= −22 V
Source Off Leakage, I
S
(Off) 0.01 nA typ
V
S
= ±15 V, V
D
= 15 V, see Figure 23
0.1 0.2 0.4 nA max
Drain Off Leakage, I
D
(Off) 0.01 nA typ
V
S
= ±15 V, V
D
= 15 V, see Figure 23
0.1 0.4 1.2 nA max
Channel On Leakage, I
D
, I
S
(On) 0.02 nA typ V
S
= V
D
= ±15 V, see Figure 26
0.2 0.5 1.2 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
160 ns typ R
L
= 300 Ω, C
L
= 35 pF
215 260 290 ns max V
S
= 10 V, see Figure 29
t
ON
(EN) 150 ns typ R
L
= 300 Ω, C
L
= 35 pF
185 225 255 ns max V
S
= 10 V, see Figure 31
t
OFF
(EN) 150 ns typ R
L
= 300 Ω, C
L
= 35 pF
175 195 210 ns max V
S
= 10 V, see Figure 31
Break-Before-Make Time Delay, t
D
75 ns typ R
L
= 300 Ω, C
L
= 35 pF
30 ns min V
S1
= V
S2
= 10 V, see Figure 30
Charge Injection, Q
INJ
−0.6 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF, see Figure 32
Off Isolation −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 100 kHz,
see Figure 25
Channel-to-Channel Crosstalk −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 28
−3 dB Bandwidth 150 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 27
Insertion Loss −6 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 27
C
S
(Off) 3 pF typ V
S
= 0 V, f = 1 MHz
C
D
(Off) 26 pF typ V
S
= 0 V, f = 1 MHz
C
D
, C
S
(On) 30 pF typ V
S
= 0 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= +22 V, V
SS
= −22 V
I
DD
50 μA typ Digital inputs = 0 V or V
DD
70 110 μA max
I
SS
0.001 μA typ Digital inputs = 0 V or V
DD
1 μA max
V
DD
/V
SS
±9/±22 V min/max GND = 0 V
1
Guaranteed by design; not subject to production test.
ADG5204
Rev. 0 | Page 5 of 20
12 V SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V max
On Resistance, R
ON
340 Ω typ V
S
= 0 V to 10 V, I
S
= −1 mA, see Figure 24
500 610 700 Ω max V
DD
= 10.8 V, V
SS
= 0 V
On-Resistance Match
Between Channels, ∆R
ON
5 Ω typ V
S
= 0 V to 10 V, I
S
= −1 mA
20 21 22 Ω max
On-Resistance Flatness, R
FLAT(ON)
145 Ω typ V
S
= 0 V to 10 V, I
S
= −1 mA
280 335 370 Ω max
LEAKAGE CURRENTS V
DD
= 13.2 V, V
SS
= 0 V
Source Off Leakage, I
S
(Off) 0.01 nA typ V
S
= 1 V/10 V, V
D
= 10 V/1 V, see Figure 23
0.1 0.2 0.4 nA max
Drain Off Leakage, I
D
(Off) 0.01 nA typ V
S
= 1 V/10 V, V
D
= 10 V/1 V, see Figure 23
0.1 0.4 1.2 nA max
Channel On Leakage, I
D
, I
S
(On) 0.02 nA typ V
S
= V
D
= 1 V/10 V, see Figure 26
0.2 0.5 1.2 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.002 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
3 pF typ
DYNAMIC CHARACTERISTICS
1
Transition Time, t
TRANSITION
240 ns typ R
L
= 300 Ω, C
L
= 35 pF
350 445 515 ns max V
S
= 8 V, see Figure 29
t
ON
(EN) 250 ns typ R
L
= 300 Ω, C
L
= 35 pF
335 420 485 ns max V
S
= 8 V, see Figure 31
t
OFF
(EN) 160 ns typ R
L
= 300 Ω, C
L
= 35 pF
195 220 240 ns max V
S
= 8 V, see Figure 31
Break-Before-Make Time Delay, t
D
140 ns typ R
L
= 300 Ω, C
L
= 35 pF
60 ns min V
S1
= V
S2
= 8 V, see Figure 30
Charge Injection, Q
INJ
−1.2 pC typ V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF, see Figure 32
Off Isolation −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 25
Channel-to-Channel Crosstalk −80 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 28
−3 dB Bandwidth 106 MHz typ R
L
= 50 Ω, C
L
= 5 pF, see Figure 27
Insertion Loss −11 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz, see Figure 27
C
S
(Off) 3.5 pF typ V
S
= 6 V, f = 1 MHz
C
D
(Off) 29 pF typ V
S
= 6 V, f = 1 MHz
C
D
, C
S
(On) 33 pF typ V
S
= 6 V, f = 1 MHz
POWER REQUIREMENTS V
DD
= 13.2 V
I
DD
40 μA typ Digital inputs = 0 V or V
DD
65 μA max
V
DD
9/40 V min/max GND = 0 V, V
SS
= 0 V
1
Guaranteed by design; not subject to production test.

ADG5204BRUZ-RL7

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Multiplexer Switch ICs 4:1 136Hz 160 Ohm High VTG Latch-up
Lifecycle:
New from this manufacturer.
Delivery:
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