IXYH40N65C3D1 Datasheet IXYH40N65C3D1, IXYQ40N65C3D1 | P1-P3

IXYH40N65C3D1

IXYQ40N65C3D1

V

CES

= 650V

I

C110

= 40A

V

CE(sat)







2.35V

t

fi(typ)

= 20ns

DS100625(8/14)

Extreme Light Punch Through

IGBT for 20-60 kHz Switching

Features



Optimized for 20-60kHz Switching



Square RBSOA



Anti-Parallel Fast Diode



Avalanche Rated



Short Circuit Capability

Advantages



High Power Density



Extremely Rugged



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts



High Frequency Power Inverters

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 650 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.5 6.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 10 A

T

J

= 150C 1.5 mA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 40A, V

GE

= 15V, Note 1 2.0 2.35 V

T

J

= 150C 2.4 V

Advance Technical Information

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 650 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 650 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 80 A

I

C110

T

C

= 110°C 40 A

I

F110

T

C

= 110°C 50 A

I

CM

T

C

= 25°C, 1ms 180 A

I

A

T

C

= 25°C 20 A

E

AS

T

C

= 25°C 300 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 10 I

CM

= 80 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 5 μs

(SCSOA) R

G

= 82, Non Repetitive

P

C

T

C

= 25°C 300 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in

Weight TO-247 6.0 g

TO-3P 5.5 g

XPT

TM

650V IGBT

GenX3

TM

w/ Diode

G = Gate C = Collector

E = Emitter Tab = Collector

TO-3P (IXYQ)

Tab

G

C

E

TO-247 (IXYH)

G

C

E

Tab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH40N65C3D1

IXYQ40N65C3D1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

e

P

TO-247 (IXYH) Outline

1 2 3

Terminals: 1 - Gate 2 - Collector

3 - Emitted

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

V

F

I

F

= 30A, V

GE

= 0V, Note 1 2.5 V

T

J

= 150°C 1.2 V

I

rr

T

J

= 150°C 23 A

t

rr

T

J

= 150°C 120 ns

R

thJC

0.60 °C/W

I

F

= 30A, V

GE

= 0V,

-di

F

/dt = 500A/μs, V

R

= 400V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 40A, V

CE

= 10V, Note 1 16 26 S

C

ie

s

1950 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 205 pF

C

res

40 pF

Q

g(on)

66 nC

Q

ge

I

C

= 40A, V

GE

= 15V, V

CE

= 0.5 • V

CES

13 nC

Q

gc

32 nC

t

d(on)

23 ns

t

ri

40 ns

E

on

0.83 mJ

t

d(off)

110 ns

t

fi

20 ns

E

of

f

0.36 0.65 mJ

t

d(on)

24 ns

t

ri

40 ns

E

on

1.60 mJ

t

d(off)

130 ns

t

fi

30 ns

E

off

0.53 mJ

R

thJC

0.50 °C/W

R

thCS

0.25 °C/W

Inductive load, T

J

= 25°C

I

C

= 30A, V

GE

= 15V

V

CE

= 400V, R

G

= 10

Note 2

Inductive load, T

J

= 150°C

I

C

= 30A, V

GE

= 15V

V

CE

= 400V, R

G

= 10

Note 2

TO-3P Outline

1 = Gate 2,4 = Collector

3 = Emitter

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

2

3

4

5

6

8 9 10 11 12 13 14 15

V

GE

- (V)

V

CE

(V)

I

C

= 80A

T

J

= 25ºC

40A

20A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5

V

GE

(V)

I

C

(

A)

T

J

= 150ºC

25ºC

- 40ºC

IXYH40N65C3D1

IXYQ40N65C3D1

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

00.511.522.533.54

V

CE

(V)

I

C

(A)

V

GE

= 15V

13V

12V

7V

9V

10V

8V

11V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

0 5 10 15 20 25 30

V

CE

(V)

I

C

(

A)

V

GE

= 15V

12V

9V

13V

10V

8V

11V

14V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

10

20

30

40

50

60

70

80

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V

CE

(V)

I

C

(A)

8V

7V

9V

V

GE

= 15V

13V

12V

11V

10V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

(ºC)

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 40A

I

C

= 20A

I

C

= 80A

IXYH40N65C3D1

IXYH40N65C3D1

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