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IXYH40N65C3D1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N65C3D1
IXYQ40N65C3D1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
0 1020304050607080
I
C
(A)
g
f s
(
S)
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
100 200 300 400 500 600 700
V
CE
(V)
I
C
(A)
T
J
= 150ºC
R
G
= 10
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 10203040506070
Q
G
(nC)
V
GE
(V)
V
CE
= 325V
I
C
= 40A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
(V)
Capacitance (pF
)
f
= 1 MH
z
C
ies
C
oes
C
res
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width (s)
Z
(th)JC
(ºC / W)
Fig. 11. Forward-Bias Safe Operating Area
0.001
0.01
0.1
1
10
100
1000
1 10 100 1000
V
DS
(V)
I
D
(A)
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limit
100µs
DC
100ms
© 2014 IXYS CORPORATION, All Rights Reserved
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10 15 20 25 30 35 40 45 50 55
R
G
()
E
off
(mJ)
0
1
2
3
4
5
6
7
8
9
E
on
(mJ)
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
10
20
30
40
50
60
70
80
90
10 15 20 25 30 35 40 45 50 55
R
G
()
t
f i
(ns)
80
120
160
200
240
280
320
360
400
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 30A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.4
0.8
1.2
1.6
2.0
15 20 25 30 35 40 45 50 55 60
I
C
(A)
E
off
(mJ)
0
1
2
3
4
5
E
on
(mJ)
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25 50 75 100 125 150
T
J
(ºC)
E
off
(mJ)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
E
on
(mJ)
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
80
15 20 25 30 35 40 45 50 55 60
I
C
(A)
t
f i
(ns)
40
60
80
100
120
140
160
180
200
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
10
20
30
40
50
60
70
80
25 50 75 100 125 150
T
J
(ºC)
t
f i
(ns)
80
90
100
110
120
130
140
150
t
d(off)
(ns)
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 400V
I
C
= 30A, 60A
IXYH40N65C3D1
IXYQ40N65C3D1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N65C3D1
IXYQ40N65C3D1
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
15 20 25 30 35 40 45 50 55 60
I
C
(A)
t
r i
(ns)
10
15
20
25
30
35
40
t
d(on)
(ns)
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC, 150ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150
T
J
(ºC)
t
r i
(ns)
20
22
24
26
28
30
32
34
36
38
t
d(on)
(ns)
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 30A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
10 15 20 25 30 35 40 45 50 55
R
G
()
t
r i
(ns)
10
20
30
40
50
60
70
80
90
100
110
t
d(on)
(ns)
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 60A
P1-P3P4-P6P7-P7

IXYH40N65C3D1

Mfr. #:
Buy IXYH40N65C3D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3
Lifecycle:
New from this manufacturer.
Delivery:
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