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NSM80101MT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 3
1 Publication Order Number:
NSM80101M/D
NSM80101MT1G
NPN Transistor with Dual
Series Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD Control Board
• High Speed Switching
• High Voltage Switching
MAXIMUM RATINGS − PNP TRANSISTOR
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Collector−Base Voltage V
CBO
80 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
500 mAdc
MAXIMUM RATINGS − SWITCHING DIODE
Rating Symbol Value Unit
Reverse Voltage V
R
100 V
Forward Current I
F
200 mA
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to
surge) t < 1 sec
t = 1 msec
I
FSM
1.0
20
A
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ESD RATINGS
Rating Class Value
Electrostatic Discharge HBM
MM
3A
M4
4000 V ≤ Failure < 8000 V
Failure > 400 V
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) @ T
A
= 25°C
Derate above 25°C
P
D
400 mW
mW/°C
Thermal Resistance from
Junction−to−Ambient (Note 1)
R
q
JA
313 °C/W
Total Device Dissipation FR−5 Board
(Note 2) T
A
= 25°C
Derate above 25°C
P
D
270 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
q
JA
463 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. FR−5 = 650 mm
2
pad, 2.0 oz Cu.
2. FR−5 = 10 mm
2
pad, 2.0 oz Cu.
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
SC−74
CASE 318F
1
2
4
NPN Transistor with Dual Series
Switching Diode
3
5
6
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MARKING DIAGRAM
NSM80101MT1G SC−74
(Pb−Free)
3000 /
Tape & Reel
3NP MG
G
3NP = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
1 23
654
D2
Q1
D1
NSM80101MT1G
http://onsemi.com
2
Q1: NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mA, I
B
= 0)
V
(BR)CEO
80 −
V
Emitter−Base Breakdown Voltage
(I
E
= 100 mA, I
C
= 0)
V
(BR)EBO
6.0 −
V
Collector Cutoff Current
(V
CE
= 60 V, I
B
= 0)
I
CES
− 0.1
mA
Collector Cutoff Current
(V
CB
= 80 V, I
E
= 0)
I
CBO
− 0.1
mA
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 10 mA, V
CE
= 1.0 V)
h
FE
120 −
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 10 mA)
V
CE(sat)
− 0.3
V
Base −Emitter Saturation Voltage
(I
C
= 10 mA, V
CE
= 5.0 Vdc)
V
BE(sat)
− 1.2
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
150 −
MHz
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
D1, D2: SWITCHING DIODE (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)
75 − V
Reverse Voltage Leakage Current
(V
R
= 75 V)
(V
R
= 20 V, T
J
= 150°C)
(V
R
= 75 V, T
J
= 150°C)
I
R
−
−
−
1.0
30
100
mA
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 2.0
pF
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
−
−
−
−
715
855
1000
1250
mV
Reverse Recovery Time
(I
F
= I
R
= 10 mA, i
R(REC)
= 1.0 mA, R
L
= 100 W)
t
rr
− 6.0
ns
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
V
FR
− 1.75
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NSM80101MT1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Current−Gain — Bandwidth Product
Figure 2. Capacitance
Figure 3. Switching Time
100 2002.0
I
C
, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
10 1000.1
V
R
, REVERSE VOLTAGE (VOLTS)
80
60
40
20
10
8.0
20
V
CE
= 2.0 V
T
J
= 25°C
T
J
= 25°C
3.0 5.0 7.0 10 20 30 50 70
f
T
, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz
)
501.0 2.0 5.00.2 0.5
6.0
4.0
C
ibo
C
obo
2010
I
C
, COLLECTOR CURRENT (mA)
200
100
50
20
10
100
t, TIME (ns)
50
200 500
1.0 k
500
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
t
r
5.0 7.0
30
70
300
700
30 70
t
d
@ V
BE(off)
= 0.5 V
C, CAPACITANCE (pF)
300
Figure 4. DC Current Gain
2.0 5000.5
I
C
, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
10
, DC CURRENT GAIN
T
J
= 125°C
1.0
3.0 5.0
V
CE
= 1.0 V
20 10030 50 200 300
h
FE
25°C
-55°C
Figure 5. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.0010.0001
0.2
0.3
0.4
0.6
0.7
0.8
1.0
1.1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
−55°C
0.5
0.9
I
C
/I
B
= 10
150°C
25°C
−55°C
P1-P3P4-P6

NSM80101MT1G

Mfr. #:
Buy NSM80101MT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT NPN TRANS & SWCH DIODE
Lifecycle:
New from this manufacturer.
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