NSM80101MT1G

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4
TYPICAL CHARACTERISTICS
Figure 7. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
V
BE(on)
, BASEEMITTER VOLTAGE (V)
0.4
0.8
1.0
V
CE
= 1 V
150°C
25°C
55°C
Figure 8. Collector Saturation Region
0.1 100.05
I
B
, BASE CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
1.0
T
J
= 25°C
50
I
C
=
100 mA
I
C
=
50 mA
I
C
=
250 mA
I
C
=
500 mA
I
C
=
10 mA
, COLLECTOR-EMITTER VOLTAGE (VOLTS)V
CE
202.0 5.00.2 0.5
Figure 9. BaseEmitter Temperature
Coefficient
100 5000.5
I
C
, COLLECTOR CURRENT (mA)
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
R
VB
, TEMPERATURE COEFFICIENT (mV/ C)
10
R
q
VB
for V
BE
q
°
1.0 2.0 5.0 20 50 200
Figure 10. Safe Operating Area
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Thermal Limit
100 mS
1 S
10 mS
1 mS
TEMPERATURE (°C)
P
D
, POWER DISSIPATION (mW)
0 20 40 60 80 100 120 140 160
400
300
200
100
0
Figure 11. Operating Temperature Derating
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TYPICAL CHARACTERISTICS
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
Figure 12. Forward Voltage Figure 13. Leakage Current
Figure 14. Capacitance
0.1
1
10
100
1000
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
T
A
= 40°C
T
A
= 55°C
T
A
= 150°C
I
F
, FORWARD CURRENT (mA)
T
A
= 125°C
0.001
0.01
0.1
1.0
10
100
0 10203040506070
T
A
= 85°C
T
A
= 55°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
I
R
, REVERSE CURRENT (mA)
0.45
0.47
0.49
0.51
0.53
0.55
0.57
0.59
0.61
012345678
V
R
, REVERSE VOLTAGE (V)
C
d
, DIODE CAPACITANCE (pF)
0 1.1 1.2
T
A
, DERATED AMBIENT TEMPERATURE (°C)
V
R
, DC REVERSE VOLTAGE (V)
0 25 50 75 100 125 150 17
5
Figure 15. Diode Power Dissipation Curve
100
75
50
25
0
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6
PACKAGE DIMENSIONS
SC74
CASE 318F05
ISSUE N
23
456
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F01, 02, 03 OBSOLETE. NEW STANDARD 318F04.
C
L
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 1.00 1.10 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b 0.25 0.37 0.50 0.010
c 0.10 0.18 0.26 0.004
D 2.90 3.00 3.10 0.114
E 1.30 1.50 1.70 0.051
e 0.85 0.95 1.05 0.034
0.20 0.40 0.60 0.008
0.039 0.043
0.002 0.004
0.015 0.020
0.007 0.010
0.118 0.122
0.059 0.067
0.037 0.041
0.016 0.024
NOM MAX
2.50 2.75 3.00 0.099 0.108 0.118
H
E
L
0° 10° 0° 10°
q
q
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
ǒ
mm
inches
Ǔ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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NSM80101MT1G

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Bipolar Transistors - BJT NPN TRANS & SWCH DIODE
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