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ADCLK914BCPZ-R7

P1-P3P4-P6P7-P9P10-P12P13-P13
ADCLK914
Rev. A | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
V
CC
= 3.3 V, V
EE
= 0 V, T
A
= −40°C to +125°C. All outputs terminated through 50 Ω to V
CC
, unless otherwise noted.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
DC INPUT CHARACTERISTICS
Input High Voltage V
IH
V
EE
+ 1.65 V
CC
V
Input Low Voltage V
IL
V
EE
V
CC
− 0.2 V
Input Differential Range V
ID
0.2 3.4 V p-p
T
A
= −40°C to +85°C
(±1.7 V between input pins)
0.2 2.8 V p-p
T
A
= 85°C to 125°C
(±1.4 V between input pins)
Input Capacitance C
IN
0.4 pF
Input Resistance 50 Ω
Differential Mode 100 Ω
Common Mode 50 kΩ Open termination
Input Bias Current 20 µA
DC OUTPUT CHARACTERISTICS
Output High Voltage V
OH
V
CC
− 0.55 V
CC
− 0.40 V
CC
− 0.25 V
Output Low Voltage V
OL
V
CC
− 2.75 V
CC
− 2.35 V
CC
− 1.9 V
Output Differential Range V
OD
1.54 1.95 2.22 V
Reference Voltage V
REF
Output Voltage (V
CC
+ 1)/2 V −500 A to +500 A
Output Resistance 250 Ω
AC PERFORMANCE
Operating Frequency 7.5 GHz
>1.1 V differential output swing,
V
CC
= 3.3 V ± 10%
Propagation Delay t
PD
127 158 202 ps
V
CC
= 3.3 V ± 10%,V
ICM
= V
REF
,
V
ID
= 1.6 V p-p
Propagation Delay Temperature
Coefficient
140 fs/°C
Propagation Delay Skew (Device
to Device)
65 ps V
ID
= 1.6 V p-p
Output Rise Time t
R
100 125 ps 20%/80%
Output Fall Time t
F
80 95 ps 80%/20%
Wideband Random Jitter
1
RJ 110 fs rms V
ID
= 1.6 V p-p, 6 V/ns, V
ICM
= 1.85 V
Additive Phase Noise
622.08 MHz −132 dBc/Hz @10 Hz offset
−143 dBc/Hz @100 Hz offset
−151 dBc/Hz @1 kHz offset
−156 dBc/Hz @10 kHz offset
−157 dBc/Hz @100 kHz offset
−156 dBc/Hz >1 MHz offset
245.76 MHz −133 dBc/Hz @10 Hz offset
−143 dBc/Hz @100 Hz offset
−153 dBc/Hz @1 kHz offset
−158 dBc/Hz @10 kHz offset
−159 dBc/Hz @100 kHz offset
−158 dBc/Hz >1 MHz offset
ADCLK914
Rev. A | Page 4 of 12
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
122.88 MHz −150 dBc/Hz @10 Hz offset
−156 dBc/Hz @100 Hz offset
−160 dBc/Hz @1 kHz offset
−161 dBc/Hz @10 kHz offset
−161 dBc/Hz @100 kHz offset
−160 dBc/Hz >1 MHz offset
POWER SUPPLY
Supply Voltage Requirement V
CC
2.97 3.63 V
Power Supply Current
Negative Supply Current I
VEE
66 111 150 mA Includes output current
Positive Supply Current I
VCC
34 55 73 mA
Power Supply Rejection
2
PSR
VCC
13 ps/V V
CC
= 3.3 V ± 10%
Output Swing Supply Rejection
3
−15 dB V
CC
= 3.3 V ± 10%
1
Calculated from SNR of ADC method. See Figure 8 for rms jitter vs. input slew rate.
2
Change in t
PD
per change in V
CC
.
3
Change in output swing per change in V
CC
.
ADCLK914
Rev. A | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage (V
CC
to GND) 6.0 V
Input Voltage −0.5 V to V
CC
+ 0.5 V
Maximum Output Voltage V
CC
+ 0.5 V
Minimum Output Voltage V
EE
− 0.5 V
Input Termination ±2 V
Voltage Reference V
CC
− V
EE
Operating Temperature Range, Ambient −40°C to +125°C
Operating Temperature, Junction 150°C
Storage Temperature Range −65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL PERFORMANCE
The ADCLK914 is specified for a case temperature (T
CASE
). To
ensure that T
CASE
is not exceeded, use an airflow source.
To determine the junction temperature on the application PCB
T
J
= T
CASE
+ (Ψ
JT
× PD)
where:
T
J
is the junction temperature (°C).
T
CASE
is the case temperature (°C) measured by the customer at
top center of package.
Ψ
JT
is determined by the values listed in Table 3.
PD is the power dissipation.
Values of θ
JA
are provided for package comparison and PCB
design considerations. θ
JA
can be used for a first-order
approximation of T
J
by the equation
T
J
= T
A
+ (θ
JA
× PD)
where T
A
is the ambient temperature (°C).
Values of θ
JB
are provided for package comparison and PCB
design considerations.
Table 3. Thermal Parameters for ADCLK914 16-Lead LFCSP
Symbol Description
1
Value Units
θ
JA
Junction-to-ambient thermal
resistance, 0.0 meters per sec air
flow per JEDEC JESD51-2 (still air)
78.4 °C/W
θ
JMA
Junction-to-ambient thermal
resistance, 1.0 meter per sec air flow
per JEDEC JESD51-6 (moving air)
68.5 °C/W
θ
JMA
Junction-to-ambient thermal
resistance, 2.5 m/s air flow per
JEDEC JESD51-6 (moving air)
61.4 °C/W
θ
JB
Junction-to-board thermal
resistance, 1.0 meter per sec air flow
per JEDEC JESD51-8 (moving air)
48.8 °C/W
θ
JC
Junction-to-case thermal resistance
(die-to-heatsink) per MIL-Std 883,
Method 1012.1
1.5 °C/W
Ψ
JT
Junction-to-top-of-package
characterization parameter, 0
meters per sec air flow per JEDEC
JESD51-2 (still air)
2.0 °C/W
1
Descriptions based on using a 2s2p test board.
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12P13-P13

ADCLK914BCPZ-R7

Mfr. #:
Buy ADCLK914BCPZ-R7
Manufacturer:
Analog Devices Inc.
Description:
Clock Buffer Ultrafast SiGe Open- Collector HVDS
Lifecycle:
New from this manufacturer.
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