Characteristics STPS30M60C
2/10 Doc ID 022020 Rev 1
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode, at T
amb
= 25 °C unless
otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current 60 A
I
F(AV)
Average forward current, δ = 0.5
T
c
= 135 °C Per diode 15
A
T
c
= 135 °C Per device 30
I
FSM
Surge non repetitive forward current t
p
= 10 ms sine-wave 400 A
P
ARM
(1)
1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
Repetitive peak avalanche power T
j
= 25 °C, t
p
= 1 µs 17600 W
V
ARM
(2)
2. See Figure 12
Maximum repetitive peak
avalanche voltage
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 66 A 80 V
V
ARM
(2)
Maximum single-pulse
peak avalanche voltage
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 66 A 80 V
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(3)
3. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
per diode 1.3
°C/W
total 0.73
R
th(c)
Coupling 0.15 °C/W
dPtot
dTj
<
1
Rth(j-a)
