Characteristics STPS30M60C
4/10 Doc ID 022020 Rev 1
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 7. Relative thermal impedance
junction to case versus pulse
duration
I (A)
M
0
20
40
60
80
100
120
140
160
180
200
220
240
1.E-03 1.E-02 1.E-01 1.E+00
I
M
t
δ = 0.5
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
t(s)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t (s)
p
Figure 8. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 9. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
I (mA)
R
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0102030405060
V (V)
R
T = 25 °C
j
T = 50 °C
j
T = 75 °C
j
T = 125 °C
j
T = 150 °C
j
T = 100 °C
j
C(pF)
100
1000
10000
1 10 100
F = 1 MHz
V = 30 mV
T = 25 °C
osc RMS
j
V (V)
R
Figure 10. Forward voltage drop versus
forward current (per diode)
Figure 11. Thermal resistance junction to
ambient versus copper surface
under tab
I (A)
FM
0.1
1.0
10.0
100.0
1000.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V (V)
FM
(Maximum values)
T = 125 °C
j
(Typical values)
T = 125 °C
j
(Maximum values)
T = 25 °C
j
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
DPAK
2
R (°C/W)
th(j-a)
S (cm )
Cu
2
epoxy printed board copper thickness = 35 µm
