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BSA223SP

P1-P3P4-P6P7-P8
2007-02-08Rev.1.3 Page 1
BSA 223SP
OptiMOS
-P Small-Signal-Transistor
Product Summary
V
DS
-20 V
R
DS(on)
1.2 Ω
I
D
-0.39 A
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
PG-SC-75
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
BPs
Type Package Pb-free
BSA 223SP PG-SC-75
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.39
-0.31
A
Pulsed drain current
T
A
=25°C
I
D puls
-1.56
Avalanche energy, single pulse
I
D
=-0.39 A , V
DD
=-10V, R
GS
=25Ω
E
AS
1.4 mJ
Reverse diode dv/dt
I
S
=-0.39A, V
DS
=-16V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
-6 kV/µs
Gate source voltage V
GS
±12
V
Power dissipation
T
A
=25°C
P
tot
0.25 W
Operating and storage temperature T
j
, T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Yes
2007-02-08Rev.1.3 Page 2
BSA 223SP
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point R
thJS
- - 150 K/W
Thermal resistance, junction - ambient, leaded R
thJA
- - 500
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250µA
V
(BR)DSS
-20 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
=-1.5µA
V
GS(th)
-0.6 -0.9 -1.2
Zero gate voltage drain current
V
DS
=-20V, V
GS
=0, T
j
=25°C
V
DS
=-20V, V
GS
=0, T
j
=150°C
I
DSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
V
GS
=-12V, V
DS
=0
I
GSS
- -10 -100 nA
Drain-source on-state resistance
V
GS
=-2.5V, I
D
=-0.29A
R
DS(on)
- 1.27 2.1
Ω
Drain-source on-state resistance
V
GS
=-4.5, I
D
=-0.39A
R
DS(on)
- 0.7 1.2
2007-02-08Rev.1.3 Page 3
BSA 223SP
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=-0.31A
0.35 0.7 - S
Input capacitance C
iss
V
GS
=0, V
DS
=-15V,
f=1MHz
- 45 56 pF
Output capacitance C
oss
- 21 26
Reverse transfer capacitance C
rss
- 17 22
Turn-on delay time t
d(on)
V
DD
=-10V, V
GS
=-4.5V,
I
D
=-0.39A, R
G
=6Ω
- 3.8 5.7 ns
Rise time t
r
- 5 7.5
Turn-off delay time t
d(off)
- 5.1 7.6
Fall time t
f
- 3.2 4.8
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=-10V, I
D
=-0.39A - -0.04 -0.05 nC
Gate to drain charge Q
gd
- -0.4 -0.5
Gate charge total Q
g
V
DD
=-10V, I
D
=-0.39A,
V
GS
=0 to -4.5V
- -0.5 -0.62
Gate plateau voltage V
(plateau)
V
DD
=-10V, I
D
=-0.39A - -2.2 -2.7 V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - -0.39 A
Inv. diode direct current, pulsed I
SM
- - -1.56
Inverse diode forward voltage V
SD
V
GS
=0, I
F
=-0.39 - -1 -1.33 V
Reverse recovery time t
rr
V
R
=-10V, |I
F
| = |l
D
|,
di
F
/dt=100A/µs
- 7.6 9.5 ns
Reverse recovery charge Q
rr
- 1.1 1.4 nC
P1-P3P4-P6P7-P8

BSA223SP

Mfr. #:
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Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 20V 390MA SC75
Lifecycle:
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