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BSA223SP
P1-P3
P4-P6
P7-P8
2007-02-08
Rev.1.3
Page 4
BSA 223SP
1 Power dissipation
P
tot
=
f
(
T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
W
0.55
BSA 223SP
P
tot
2 Drain current
I
D
=
f
(
T
A
)
parameter: |
V
GS
|
≥
4.5 V
0
20
40
60
80
100
120
°C
160
T
A
0
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
-0.36
A
-0.42
BSA 223SP
I
D
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
A
BSA 223SP
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
t
p
= 180.0
µs
4 Transient thermal impedance
Z
thJA
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSA 223SP
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2007-02-08
Rev.1.3
Page 5
BSA 223SP
5 Typ. output characteristic
I
D
=
f
(
V
DS
)
parameter:
T
j
=25°C
0
0.3
0.6
0.9
V
1.5
-
V
DS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-
I
D
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
6 Typ. drain-source on resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
,
T
j
= 25 °C
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-
I
D
0
0.5
1
1.5
2
2.5
3
Ω
4
R
DS(on)
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |
V
DS
|
≥
2 x |
I
D
| x
R
DS(on)max
parameter:
T
j
= 25 °C
0
0.5
1
1.5
2
V
3
-
V
GS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-
I
D
8 Typ. forward transconductance
g
fs
= f(
I
D
)
parameter:
T
j
= 25 °C
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-
I
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
S
1.1
g
fs
2007-02-08
Rev.1.3
Page 6
BSA 223SP
9 Drain-source on-resistance
R
DS(on)
= f(
T
j
)
parameter:
I
D
= -0.39 A,
V
GS
= -4.5 V
-60
-20
20
60
100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
Ω
1.6
R
DS(on)
typ.
98%
10 Typ. gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter:
V
GS
=
V
DS
-60
-20
20
60
100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
V
1.6
-
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
=0,
f
=1 MHz,
T
j
= 25 °C
0
2
4
6
8
10
12
V
15
-
V
DS
1
10
2
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j
= 25 °C
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
V
-3
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSA 223SP
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
P1-P3
P4-P6
P7-P8
BSA223SP
Mfr. #:
Buy BSA223SP
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 20V 390MA SC75
Lifecycle:
New from this manufacturer.
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BSA223SP