IRFB4137PbF
2
www.irf.com © 2012 International Rectifier October 30, 2012
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 300 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.24 ––– V/°C Reference to 25°C, I
D
= 3.5mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 56 69
m
V
GS
= 10V, I
D
= 24A
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
=300 V, V
GS
= 0V
––– ––– 250 V
DS
=300V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
R
G
Gate Resistance ––– 1.3 –––
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
gfs Forward Transconductance 45 ––– ––– S V
DS
= 50V, I
D
=24A
Q
g
Total Gate Charge ––– 83 125
nC
I
D
= 24A
Q
gs
Gate-to-Source Charge ––– 28 42 V
DS
= 150V
Q
gd
Gate-to-Drain Charge ––– 26 39
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 18 –––
ns
V
DD
= 195V
t
r
Rise Time ––– 23 ––– I
D
= 24A
t
d(off)
Turn-Off Delay Time ––– 34 –––
R
G
= 2.2
t
f
Fall Time ––– 20 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 5168 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 300 ––– V
DS
= 50V
C
rss
Reverse Transfer Capacitance ––– 77 –––
ƒ = 1.0MHz
C
oss eff.(ER)
Effective Output Capacitance (Energy Related) ––– 196 –––
V
GS
= 0V, VDS = 0V to 240V
See Fig.11
C
oss eff.(TR)
Output Capacitance (Time Related) ––– 265 ––– V
GS
= 0V, VDS = 0V to 240V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 38
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 152
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 24A,V
GS
= 0V
t
rr
Reverse Recovery Time
––– 302 –––
ns
T
J
= 25°C V
DD
= 255V
––– 379 ––– T
J
= 125°C I
F
= 24A,
Q
rr
Reverse Recovery Charge
––– 1739 –––
nC
T
J
= 25°C di/dt = 100A/µs
––– 2497 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 13 ––– A
T
J
= 25°C
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting T
J
= 25°C, L = 1.56mH, R
G
= 50, I
AS
= 24A, V
GS
=10V.
I
SD
24A, di/dt 1771A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 400µs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994
Ris measured at T
J
approximately 90°C
