IRFB4137PbF
4
www.irf.com © 2012 International Rectifier October 30, 2012
-60 -20 20 60 100 140 180
T
J
, Temperature ( °C )
270
280
290
300
310
320
330
340
350
360
370
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 3.5mA
Fig 8. Maximum Safe Operating Area
-50 0 50 100 150 200 250 300 350
V
DS,
Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
E
n
e
r
g
y
(
µ
J
)
Fig 11. Typical C
oss
Stored Energy
Fig 12. Threshol
d Voltage vs. Temperature
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
Fig 7. Typical Source-Drain Diode Forward Voltage
-75 -25 25 75 125 175 225
T
J
, Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig 10. Drain-to–Source Breakdown Voltage
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
DC
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
7
14
21
28
35
42
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Fig 9. Maximum Drain Current vs. Case Temperature
