Philips Semiconductors
PHP/PHB/PHD45N03LTA
TrenchMOS™ logic level FET
Product data Rev. 03 — 2 October 2002 2 of 14
9397 750 10194
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 175 °C - 25 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=5V - 40 A
P
tot
total power dissipation T
mb
=25°C - 65 W
T
j
junction temperature - 175 °C
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 25 A; T
j
=25°C1321mΩ
V
GS
=5V; I
D
= 25 A; T
j
=25°C 17.5 24 mΩ
V
GS
= 3.5 V; I
D
= 5.2 A; T
j
=25°C 2240mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 175 °C - 25 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 175 °C; R
GS
=20kΩ -25V
V
GS
gate-source voltage - ±20 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=5V;Figure 2 and 3 -40A
T
mb
= 100 °C; V
GS
=5V;Figure 2 -30A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 - 160 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 -65W
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −55 +175 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C - 40 A
I
SM
peak source (diode forward) current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 160 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load;
I
D
= 20 A; t
p
= 0.1 ms; V
DD
=15V;
R
GS
=50Ω; V
GS
= 5V; starting T
j
=25°C;
-40mJ
