NXP Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in motor control circuits BTA212X- 600D -
or with other highly inductive loads. BTA212X- 600E 800E
These devices balance the BTA212X- 600F -
requirements of commutation V
DRM
Repetitive peak off-state 600 800 V
performance and gate sensitivity. The voltages
"sensitive gate" E series and "logic level" I
T(RMS)
RMS on-state current 12 12 A
D series are intended for interfacing with I
TSM
Non-repetitive peak on-state 95 95 A
low power drivers, including micro current
controllers.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
Repetitive peak off-state - 600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 12 A
T
hs
≤ 56 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A
I
2
tI
2
t for fusing t = 10 ms - 45 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 0.2 A; 100 A/µs
on-state current after dI
G
/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
123
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 2003 1 Rev 3.000
