NXP Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
R
th j-a
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA212X- ...D ...E ...F
I
GT
Gate trigger current
2
V
D
= 12 V; I
T
= 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 15 25 30 mA
V
T
On-state voltage I
T
= 17 A - 1.6 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 1.5 V
V
D
= 400 V; I
T
= 0.1 A; 0.25 - V
T
j
= 125 ˚C
I
D
Off-state leakage current V
D
= V
DRM(max)
; T
j
= 125 ˚C - 0.5 mA
2 Device does not trigger in the T2-, G+ quadrant.
June 2003 2 Rev 3.000
