IPP048N06L G IPB048N06L G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 0.5 K/W
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
3)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
60 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=270 μA
1.2 1.6 2
Zero gate voltage drain current
I
DSS
V
DS
=60 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 μA
V
DS
=60 V, V
GS
=0 V,
T
j
=125 °C
- 1 100
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- 10 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V, I
D
=100 A
- 3.7 4.7
m:
V
GS
=4.5 V, I
D
=66 A
- 4.4 5.7
V
GS
=10 V, I
D
=100 A,
SMD version
3.4 4.4
V
GS
=4.5 V, I
D
=66A,
SMD version
4.1 5.4
Gate resistance
R
G
- 1.9 -
:
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=100 A
92 183 - S
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain connection.
PCB is vertical in still air.
Values
Rev. 1.13 page 2 2007-08-29
