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IPP048N06L G

P1-P3P4-P6P7-P9P10-P10
IPP048N06L G IPB048N06L G
13 Avalanche characteristics 14 Typ. gate charge
I
AS
=f(t
AV
); R
GS
=25 :
V
GS
=f(Q
gate
); I
D
=100 A pulsed
parameter: T
j(start)
parameter: V
DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
=f(T
j
); I
D
=1 mA
12V
30 V
48 V
0
2
4
6
8
10
12
0 40 80 120 160 200
Q
gate
[nC]
V
GS
[V]
50
55
60
65
70
75
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
10
3
10
2
10
1
10
0
10
3
10
2
10
1
10
0
t
AV
[μs]
I
AV
[A]
Rev. 1.13 page 7 2007-08-29
IPP048N06L G IPB048N06L G
PG-TO-263-3 (D²-Pak)
Rev. 1.13 page 8 2007-08-29
IPP048N06L G IPB048N06L G
PG-TO220-3: Outline
Rev. 1.13 page 9 2007-08-29
P1-P3P4-P6P7-P9P10-P10

IPP048N06L G

Mfr. #:
Buy IPP048N06L G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 100A TO-220
Lifecycle:
New from this manufacturer.
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